WNM12N65F Specs and Replacement
Type Designator: WNM12N65F
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 39 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 12 A
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
Package: TO220F
WNM12N65F substitution
- MOSFET ⓘ Cross-Reference Search
WNM12N65F datasheet
wnm12n65-f.pdf
WNM12N65/WNM12N65F WNM12N65/WNM12N65F 650V N-Channel MOSFET Description Features C The WNM12N65/WNM12N65F is N-Channel 650V@TJ=25 enhancement MOS Field Effect Transistor. Uses Typ.RDS(on)=0.57 advanced high voltage MOSFET Process and Low gate charge design to provide excellent RDS (ON) with low gate 100% avalanche tested charge. This device is suitable for use in p... See More ⇒
Detailed specifications: WCM2002, WCM2007, WCM2068, WNM07N60, WNM07N60F, WNM07N65, WNM07N65F, WNM12N65, AO3400A, WNM2016, WNM2020, WNM2021, WNM2024, WNM2030, WNM2046, WNM2046B, WNM2072
Keywords - WNM12N65F MOSFET specs
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