All MOSFET. WNM12N65F Datasheet

 

WNM12N65F Datasheet and Replacement


   Type Designator: WNM12N65F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 39 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
   Package: TO220F
 

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WNM12N65F Datasheet (PDF)

 6.1. Size:1048K  willsemi
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WNM12N65F

WNM12N65/WNM12N65FWNM12N65/WNM12N65F650V N-Channel MOSFETDescription FeaturesCThe WNM12N65/WNM12N65F is N-Channel 650V@TJ=25enhancement MOS Field Effect Transistor. Uses Typ.RDS(on)=0.57advanced high voltage MOSFET Process and Low gate chargedesign to provide excellent RDS (ON) with low gate 100% avalanche testedcharge. This device is suitable for use in p

Datasheet: WCM2002 , WCM2007 , WCM2068 , WNM07N60 , WNM07N60F , WNM07N65 , WNM07N65F , WNM12N65 , RU6888R , WNM2016 , WNM2020 , WNM2021 , WNM2024 , WNM2030 , WNM2046 , WNM2046B , WNM2072 .

History: JFPC12N65C

Keywords - WNM12N65F MOSFET datasheet

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