All MOSFET. WNM12N65F Datasheet

 

WNM12N65F Datasheet and Replacement


   Type Designator: WNM12N65F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 39 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
   Package: TO220F
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WNM12N65F Datasheet (PDF)

 6.1. Size:1048K  willsemi
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WNM12N65F

WNM12N65/WNM12N65FWNM12N65/WNM12N65F650V N-Channel MOSFETDescription FeaturesCThe WNM12N65/WNM12N65F is N-Channel 650V@TJ=25enhancement MOS Field Effect Transistor. Uses Typ.RDS(on)=0.57advanced high voltage MOSFET Process and Low gate chargedesign to provide excellent RDS (ON) with low gate 100% avalanche testedcharge. This device is suitable for use in p

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: BSC060P03NS3EG | 1N70Z | AP30H80Q | R6006JND3 | PDP0959 | PTP20N70A | IRF9530SMD

Keywords - WNM12N65F MOSFET datasheet

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