IRF550A MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF550A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 167 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 40 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 75 nC
Rise Time (tr): 20 nS
Drain-Source Capacitance (Cd): 420 pF
Maximum Drain-Source On-State Resistance (Rds): 0.04 Ohm
Package: TO220
IRF550A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF550A Datasheet (PDF)
irf550a.pdf
IRF550AAdvanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input CapacitanceID = 40 A Improved Gate Charge Extended Safe Operating AreaTO-220 175 C Operating TemperatureA (Max.) @ VDS = 100V Lower Leakage Current : 10 Lower RDS(ON) : 0.032 (Typ.)1231.Gate 2. Drain 3. Sourc
irf550a.pdf
Advanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input CapacitanceID = 40 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.032 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum
Datasheet: IRF540A , IRF540FI , IRF540N , IRF540NL , IRF540NS , IRF541 , IRF542 , IRF543 , K3569 , IRF610 , IRF610A , IRF610S , IRF611 , IRF612 , IRF613 , IRF614 , IRF614A .
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