IRF550A MOSFET Datasheet: N-Ch, 100V, 40A. Full specification with pinout and replacement list

IRF550A Specs and Replacement

Type Designator: IRF550A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 167 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 420 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: TO220

IRF550A substitution

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IRF550A datasheet

..1. Size:261K fairchild semi
irf550a.pdf pdf_icon

IRF550A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input Capacitance ID = 40 A Improved Gate Charge Extended Safe Operating Area TO-220 175 C Operating Temperature A (Max.) @ VDS = 100V Lower Leakage Current 10 Lower RDS(ON) 0.032 (Typ.) 1 2 3 1.Gate 2. Drain 3. Sourc... See More ⇒

..2. Size:956K samsung
irf550a.pdf pdf_icon

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input Capacitance ID = 40 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.032 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum ... See More ⇒

Detailed specifications: IRF540A , IRF540FI , IRF540N , IRF540NL , IRF540NS , IRF541 , IRF542 , IRF543 , IRF9540 , IRF610 , IRF610A , IRF610S , IRF611 , IRF612 , IRF613 , IRF614 , IRF614A .