IRF550A - аналоги, параметры транзистора - Справочник транзисторов

IRF550A даташит

..1. Size:261K fairchild semi
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IRF550A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input Capacitance ID = 40 A Improved Gate Charge Extended Safe Operating Area TO-220 175 C Operating Temperature A (Max.) @ VDS = 100V Lower Leakage Current 10 Lower RDS(ON) 0.032 (Typ.) 1 2 3 1.Gate 2. Drain 3. Sourc

..2. Size:956K samsung
irf550a.pdf pdf_icon

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input Capacitance ID = 40 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.032 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum

Другие MOSFET... IRF540A , IRF540FI , IRF540N , IRF540NL , IRF540NS , IRF541 , IRF542 , IRF543 , IRF9540 , IRF610 , IRF610A , IRF610S , IRF611 , IRF612 , IRF613 , IRF614 , IRF614A .