All MOSFET. WNM4153 Datasheet

 

WNM4153 Datasheet and Replacement


   Type Designator: WNM4153
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.37 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V
   |Id|ⓘ - Maximum Drain Current: 0.88 A
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.31 Ohm
   Package: SOT523
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WNM4153 Datasheet (PDF)

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WNM4153

WNM4153 WNM4153 N-Channel, 20V, 0.88A, Small Signal MOSFET Http://www.willsemi.com Top VDS (V) RDS(on) () D 0.220 @ VGS=4.5V 3 20 0.260 @ VGS=2.5V0.320 @ VGS=1.8V1 2 G S Descriptions SOT-523 DThe WNM4153 is the N-Channel enhancement 3MOS Field Effect Transistor, uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. T

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: 2SK1571 | IRF7473

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