WNM4153 MOSFET. Datasheet pdf. Equivalent
Type Designator: WNM4153
Marking Code: N3F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.37 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 0.88 A
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.31 Ohm
Package: SOT523
WNM4153 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WNM4153 Datasheet (PDF)
wnm4153.pdf
WNM4153 WNM4153 N-Channel, 20V, 0.88A, Small Signal MOSFET Http://www.willsemi.com Top VDS (V) RDS(on) () D 0.220 @ VGS=4.5V 3 20 0.260 @ VGS=2.5V0.320 @ VGS=1.8V1 2 G S Descriptions SOT-523 DThe WNM4153 is the N-Channel enhancement 3MOS Field Effect Transistor, uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. T
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: 2SK1740
History: 2SK1740
LIST
Last Update
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918