WNM4153 Specs and Replacement
Type Designator: WNM4153
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.37 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V
|Id| ⓘ - Maximum Drain Current: 0.88 A
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.31 Ohm
Package: SOT523
WNM4153 substitution
- MOSFET ⓘ Cross-Reference Search
WNM4153 datasheet
wnm4153.pdf
WNM4153 WNM4153 N-Channel, 20V, 0.88A, Small Signal MOSFET Http //www.willsemi.com Top VDS (V) RDS(on) ( ) D 0.220 @ VGS=4.5V 3 20 0.260 @ VGS=2.5V 0.320 @ VGS=1.8V 1 2 G S Descriptions SOT-523 D The WNM4153 is the N-Channel enhancement 3 MOS Field Effect Transistor, uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. T... See More ⇒
Detailed specifications: WNM3003, WNM3008, WNM3011, WNM3013, WNM3017, WNM4001, WNM4002, WNM4006, AO4407A, WNM6001, WNMD2153, WNMD2154, WNMD2158, WNMD2160, WNMD2162, WNMD2165, WNMD2166
Keywords - WNM4153 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: WCM2068
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