All MOSFET. WNMD3014 Datasheet

 

WNMD3014 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WNMD3014
   Marking Code: WNM3014
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 6.8 A
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm
   Package: SOP8L

 WNMD3014 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WNMD3014 Datasheet (PDF)

 ..1. Size:118K  willsemi
 wnmd3014.pdf

WNMD3014 WNMD3014

WNMD3014WNMD3014Dual N-Channel, 30V, 6.8A, Power MOSFET Http//:www.willsemi.com VDS (V) Rds(on) ( )0.023@ VGS=10V300.033@ VGS=4.5V DescriptionsSOP-8LThe WNMD3014 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)D2D1 D1 D2with low gate charge. This device is suitable for use 8 7 6 5in D

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: 2SK1636S

 

 
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