All MOSFET. WNMD3014 Datasheet

 

WNMD3014 Datasheet and Replacement


   Type Designator: WNMD3014
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6.8 A
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm
   Package: SOP8L
 

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WNMD3014 Datasheet (PDF)

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WNMD3014

WNMD3014WNMD3014Dual N-Channel, 30V, 6.8A, Power MOSFET Http//:www.willsemi.com VDS (V) Rds(on) ( )0.023@ VGS=10V300.033@ VGS=4.5V DescriptionsSOP-8LThe WNMD3014 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)D2D1 D1 D2with low gate charge. This device is suitable for use 8 7 6 5in D

Datasheet: WNMD2168 , WNMD2171 , WNMD2172 , WNMD2173 , WNMD2174 , WNMD2176 , WNMD2178 , WNMD2179 , IRFP260N , WNMD6003 , WPM1480 , WPM1481 , WPM1483 , WPM1485 , WPM1488 , WPM2005B , WPM2006 .

History: NDP510A | IPI120P04P4L-03 | 2SK2533 | WMQ080N03LG2 | STH6N95K5-2 | SSG4490N | 75N05E

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