All MOSFET. WNMD6003 Datasheet

 

WNMD6003 Datasheet and Replacement


   Type Designator: WNMD6003
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.37 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.3 A
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.6 Ohm
   Package: SOT563
 

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WNMD6003 Datasheet (PDF)

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WNMD6003

WNMD6003 WNMD6003 Dual N-Channel, 60V, 0.30A, Power MOSFET Http//:www.sh-willsemi.com VDS (V) Rds(on) () 1.4@ VGS=10V 60 1.7@ VGS=4.5V ESD Rating:2000V HBM SOT-563 Descriptions The WNMD6003 is Dual N-Channel enhancem -ent MOS Field Effect Transistor. Uses advanced D1 G2 S2trench technology and design to provide excellent 6 5 4RDS (ON) with low gate charge. This d

Datasheet: WNMD2171 , WNMD2172 , WNMD2173 , WNMD2174 , WNMD2176 , WNMD2178 , WNMD2179 , WNMD3014 , IRF640N , WPM1480 , WPM1481 , WPM1483 , WPM1485 , WPM1488 , WPM2005B , WPM2006 , WPM2009D .

History: JCS7HN60F | SFB072N150C2 | AOCA35212E | IRF3706PBF | SSM9980GH | NDFPD1N150CG | MSAFX11P50A

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