All MOSFET. WPM5001 Datasheet

 

WPM5001 Datasheet and Replacement


   Type Designator: WPM5001
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.12 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.18 A
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 10 Ohm
   Package: SOT23
 

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WPM5001 Datasheet (PDF)

 ..1. Size:946K  willsemi
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WPM5001

WPM5001WPM5001Single P-Channel, -50V, -0.2A, Power MOSFET Http//:www.sh-willsemi.comVDS (V) Typical Rds(on) ()3.0@ VGS= 10V-503.5@ VGS= 5VESD ProtectedSOT-23DescriptionsThe WPM5001 is P-Channel enhancementMOS Field Effect Transistor. Uses advanced trenchtechnology and design to provide excellent RDS (ON)with low gate charge. This device is suitable for usein

Datasheet: WPM2341A , WPM3004 , WPM3005 , WPM3012 , WPM3401 , WPM3407 , WPM4801 , WPM4803 , IRF9540N , WPM9435 , WPMD2008 , WPMD2010 , WPMD2011 , WPMD2012 , WPMD2013 , WPMD3002 , BSR202N .

History: WPMD2010 | SM1F14NSKP

Keywords - WPM5001 MOSFET datasheet

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