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WPM5001 Specs and Replacement

Type Designator: WPM5001

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.12 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.18 A

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 10 Ohm

Package: SOT23

WPM5001 substitution

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WPM5001 datasheet

 ..1. Size:946K  willsemi
 wpm5001.pdf pdf_icon

WPM5001

WPM5001 WPM5001 Single P-Channel, -50V, -0.2A, Power MOSFET Http// www.sh-willsemi.com VDS (V) Typical Rds(on) ( ) 3.0@ VGS= 10V -50 3.5@ VGS= 5V ESD Protected SOT-23 Descriptions The WPM5001 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in ... See More ⇒

Detailed specifications: WPM2341A, WPM3004, WPM3005, WPM3012, WPM3401, WPM3407, WPM4801, WPM4803, SPP20N60C3, WPM9435, WPMD2008, WPMD2010, WPMD2011, WPMD2012, WPMD2013, WPMD3002, BSR202N

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