WPMD3002 Specs and Replacement
Type Designator: WPMD3002
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.8 A
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
Package: SOP8L
WPMD3002 substitution
- MOSFET ⓘ Cross-Reference Search
WPMD3002 datasheet
wpmd3002.pdf
WPMD3002 WPMD3002 Dual P-Channel, -30V, -4.9A, Power MOSFET Http// www.willsemi.com VDS (V) Rds(on) ( ) 0.049@ VGS=-10V -30 0.070@ VGS=-4.5V Descriptions SOP-8L The WPMD3002 is the Dual P-Channel logic mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistanc... See More ⇒
Detailed specifications: WPM4803, WPM5001, WPM9435, WPMD2008, WPMD2010, WPMD2011, WPMD2012, WPMD2013, IRF1010E, BSR202N, BSR302N, BSR802N, BSS205N, BSS214N, BSS306N, BSS316N, BSS806N
Keywords - WPMD3002 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: WM02N31M | 2SK3024-Z | IRLU3717PBF | SI1051X | BXL4001 | SVT078R0ND | NCEP60T12A
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