All MOSFET. WPMD3002 Datasheet

 

WPMD3002 Datasheet and Replacement


   Type Designator: WPMD3002
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.8 A
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: SOP8L
 

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WPMD3002 Datasheet (PDF)

 ..1. Size:232K  willsemi
 wpmd3002.pdf pdf_icon

WPMD3002

WPMD3002WPMD3002Dual P-Channel, -30V, -4.9A, Power MOSFET Http//:www.willsemi.com VDS (V) Rds(on) ( )0.049@ VGS=-10V-300.070@ VGS=-4.5VDescriptionsSOP-8LThe WPMD3002 is the Dual P-Channel logic mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistanc

Datasheet: WPM4803 , WPM5001 , WPM9435 , WPMD2008 , WPMD2010 , WPMD2011 , WPMD2012 , WPMD2013 , IRF1010E , BSR202N , BSR302N , BSR802N , BSS205N , BSS214N , BSS306N , BSS316N , BSS806N .

History: BSC190N12NS3G

Keywords - WPMD3002 MOSFET datasheet

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