BSR802N PDF and Equivalents Search

 

BSR802N Specs and Replacement

Type Designator: BSR802N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 3.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 290 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm

Package: SOT23

BSR802N substitution

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BSR802N datasheet

 ..1. Size:412K  infineon
 bsr802n.pdf pdf_icon

BSR802N

BSR802N OptiMOS ' .99 '64;.9 (>.;?6?@ %>E Features D U ) 8=6CC A 1 m D n) m x G U C=6C8 B CH B D9 1 G U 0 AHF6 'D8 A J A 1 F6H 9 7 D U J6A6C8= F6H 9 U !DDHEF>CH 8DB E6H>7A HD .* / G C U , I6A>;> 9 688DF9>C6CH 1 Type Package (.=2 .;1 &229 ;3 .@622 Packing N G C ' E8G F A Ye ) DC 9F... See More ⇒

 ..2. Size:136K  tysemi
 bsr802n.pdf pdf_icon

BSR802N

Product specification BSR802N OptiMOS ' .99 '64;.9 (>.;?6?@ %>E Features D U ) 8=6CC A 1 m D n) m x G U C=6C8 B CH B D9 1 G U 0 AHF6 'D8 A J A 1 F6H 9 7 D U J6A6C8= F6H 9 U !DDHEF>CH 8DB E6H>7A HD .* / G C U , I6A>;> 9 688DF9>C6CH 1 Type Package (.=2 .;1 &229 ;3 .@622 Packing N G ... See More ⇒

Detailed specifications: WPMD2008, WPMD2010, WPMD2011, WPMD2012, WPMD2013, WPMD3002, BSR202N, BSR302N, IRF530, BSS205N, BSS214N, BSS306N, BSS316N, BSS806N, DMG2307L, DMG3401LSN, DMG3407SSN

Keywords - BSR802N MOSFET specs

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