All MOSFET. BSR802N Datasheet

 

BSR802N Datasheet and Replacement


   Type Designator: BSR802N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 3.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 290 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: SOT23
 

 BSR802N substitution

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BSR802N Datasheet (PDF)

 ..1. Size:412K  infineon
 bsr802n.pdf pdf_icon

BSR802N

BSR802NOptiMOS ':.99 '64;.9 (>.;?6?@%>EFeaturesD U ) 8=6CC:A 1 m D n) m x G U C=6C8:B :CH B D9: 1 G U 0 AHF6 'D8 A:J:A 1 F6H:9 7 DU J6A6C8=: F6H:9U !DDHEF>CH 8DB E6H>7A: HD .* / G C U , I6A>;>:9 688DF9>C6CH1Type Package (.=2 .;1 &229 ;3:.@622 Packing N G C ' E8G F::A Ye ) DC 9F

 ..2. Size:136K  tysemi
 bsr802n.pdf pdf_icon

BSR802N

Product specificationBSR802NOptiMOS ':.99 '64;.9 (>.;?6?@%>EFeaturesD U ) 8=6CC:A 1 m D n) m x G U C=6C8:B :CH B D9: 1 G U 0 AHF6 'D8 A:J:A 1 F6H:9 7 DU J6A6C8=: F6H:9U !DDHEF>CH 8DB E6H>7A: HD .* / G C U , I6A>;>:9 688DF9>C6CH1Type Package (.=2 .;1 &229 ;3:.@622 Packing N G

Datasheet: WPMD2008 , WPMD2010 , WPMD2011 , WPMD2012 , WPMD2013 , WPMD3002 , BSR202N , BSR302N , AO4407 , BSS205N , BSS214N , BSS306N , BSS316N , BSS806N , DMG2307L , DMG3401LSN , DMG3407SSN .

History: FDMS86263P

Keywords - BSR802N MOSFET datasheet

 BSR802N cross reference
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