PMV185XN PDF and Equivalents Search

 

PMV185XN Specs and Replacement

Type Designator: PMV185XN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.325 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 1.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 30 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm

Package: SOT23

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PMV185XN datasheet

 ..1. Size:229K  tysemi
 pmv185xn.pdf pdf_icon

PMV185XN

Product specification PMV185XN 30 V, single N-channel Trench MOSFET 3 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Low RDSon Very fast switching Trench MOSF... See More ⇒

Detailed specifications: DMN2041L, DMN3110S, DMP1045U, MGSF1N02LT1G, MGSF1N03LT1G, MGSF2N02ELT1G, NTR1P02LT1G, PMV170UN, AO3407, PMV33UPE, PMV50UPE, PMV65UN, PMV90EN, QM3001K, QM3007K, WNM2023, WNM2025

Keywords - PMV185XN MOSFET specs

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