PMV185XN Datasheet and Replacement
Type Designator: PMV185XN
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.325 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 1.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 30 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
Package: SOT23
PMV185XN substitution
PMV185XN Datasheet (PDF)
pmv185xn.pdf

Product specificationPMV185XN30 V, single N-channel Trench MOSFET3 August 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.1.2 Features and benefits Low RDSon Very fast switching Trench MOSF
Datasheet: DMN2041L , DMN3110S , DMP1045U , MGSF1N02LT1G , MGSF1N03LT1G , MGSF2N02ELT1G , NTR1P02LT1G , PMV170UN , 7N60 , PMV33UPE , PMV50UPE , PMV65UN , PMV90EN , QM3001K , QM3007K , WNM2023 , WNM2025 .
Keywords - PMV185XN MOSFET datasheet
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History: DH019N04I | APM2324A



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