PMV185XN MOSFET. Datasheet pdf. Equivalent
Type Designator: PMV185XN
SMD Transistor Code: EH
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 0.325 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 12 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 1.5 V
Maximum Drain Current |Id|: 1.2 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 11 nS
Drain-Source Capacitance (Cd): 30 pF
Maximum Drain-Source On-State Resistance (Rds): 0.25 Ohm
Package: SOT23
PMV185XN Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMV185XN Datasheet (PDF)
1.1. pmv185xn.pdf 
Size:229K _tysemi
Product specification PMV185XN 30 V, single N-channel Trench MOSFET 3 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits • Low RDSon • Very fast switching • Trench MOSF
Datasheet: DMN2041L , DMN3110S , DMP1045U , MGSF1N02LT1G , MGSF1N03LT1G , MGSF2N02ELT1G , NTR1P02LT1G , PMV170UN , IRFP260N , PMV33UPE , PMV50UPE , PMV65UN , PMV90EN , QM3001K , QM3007K , WNM2023 , WNM2025 .
