All MOSFET. PMV185XN Datasheet

 

PMV185XN MOSFET. Datasheet pdf. Equivalent

Type Designator: PMV185XN

SMD Transistor Code: EH

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.325 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 12 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1.5 V

Maximum Drain Current |Id|: 1.2 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 11 nS

Drain-Source Capacitance (Cd): 30 pF

Maximum Drain-Source On-State Resistance (Rds): 0.25 Ohm

Package: SOT23

PMV185XN Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PMV185XN Datasheet (PDF)

1.1. pmv185xn.pdf Size:229K _tysemi

PMV185XN
PMV185XN

Product specification PMV185XN 30 V, single N-channel Trench MOSFET 3 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits • Low RDSon • Very fast switching • Trench MOSF

Datasheet: DMN2041L , DMN3110S , DMP1045U , MGSF1N02LT1G , MGSF1N03LT1G , MGSF2N02ELT1G , NTR1P02LT1G , PMV170UN , IRFP260N , PMV33UPE , PMV50UPE , PMV65UN , PMV90EN , QM3001K , QM3007K , WNM2023 , WNM2025 .

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