All MOSFET. PMV33UPE Datasheet

 

PMV33UPE Datasheet and Replacement


   Type Designator: PMV33UPE
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.49 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 5.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 208 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
   Package: SOT23
 

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PMV33UPE Datasheet (PDF)

 ..1. Size:1599K  nxp
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PMV33UPE

PMV33UPE20 V, single P-channel Trench MOSFETRev. 1 12 June 2012 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Low threshold voltage Trench MOSFET technology Very f

 ..2. Size:348K  tysemi
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PMV33UPE

Product specificationPMV33UPE20 V, single P-channel Trench MOSFETRev. 1 12 June 2012 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Low threshold voltage Trench MOSFET

Datasheet: DMN3110S , DMP1045U , MGSF1N02LT1G , MGSF1N03LT1G , MGSF2N02ELT1G , NTR1P02LT1G , PMV170UN , PMV185XN , 75N75 , PMV50UPE , PMV65UN , PMV90EN , QM3001K , QM3007K , WNM2023 , WNM2025 , WNM2027 .

History: GSM4435S | 2SJ585LS | STD16N65M5 | NTMD3P03R2G | KO3402 | AM7361P | NTD6416ANT

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