PMV33UPE Specs and Replacement
Type Designator: PMV33UPE
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.49 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 5.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 208 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
Package: SOT23
PMV33UPE substitution
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PMV33UPE datasheet
pmv33upe.pdf
PMV33UPE 20 V, single P-channel Trench MOSFET Rev. 1 12 June 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Low threshold voltage Trench MOSFET technology Very f... See More ⇒
pmv33upe.pdf
Product specification PMV33UPE 20 V, single P-channel Trench MOSFET Rev. 1 12 June 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Low threshold voltage Trench MOSFET... See More ⇒
Detailed specifications: DMN3110S, DMP1045U, MGSF1N02LT1G, MGSF1N03LT1G, MGSF2N02ELT1G, NTR1P02LT1G, PMV170UN, PMV185XN, 18N50, PMV50UPE, PMV65UN, PMV90EN, QM3001K, QM3007K, WNM2023, WNM2025, WNM2027
Keywords - PMV33UPE MOSFET specs
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