All MOSFET. PMV90EN Datasheet

 

PMV90EN Datasheet and Replacement


   Type Designator: PMV90EN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 31 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.084 Ohm
   Package: SOT23
 

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PMV90EN Datasheet (PDF)

 ..1. Size:384K  tysemi
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PMV90EN

Product specificationPMV90EN30 V, single N-channel Trench MOSFETRev. 1 13 February 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible Trench MOSF

 0.1. Size:718K  nxp
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PMV90EN

PMV90ENE30 V, N-channel Trench MOSFET20 April 2016 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology ElectroStatic Discha

Datasheet: MGSF1N03LT1G , MGSF2N02ELT1G , NTR1P02LT1G , PMV170UN , PMV185XN , PMV33UPE , PMV50UPE , PMV65UN , IRFB31N20D , QM3001K , QM3007K , WNM2023 , WNM2025 , WNM2027 , WNM2034 , XP151A11B0MR , XP151A12A2MR .

History: WMK26N65SR | STP76NF75 | IPG20N10S4L-35A | RJJ0315DPA | WMN08N60C4 | WMM90R500S | NTB095N65S3HF

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