PMV90EN Datasheet and Replacement
Type Designator: PMV90EN
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.31 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 31 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.084 Ohm
Package: SOT23
PMV90EN substitution
PMV90EN Datasheet (PDF)
pmv90en.pdf

Product specificationPMV90EN30 V, single N-channel Trench MOSFETRev. 1 13 February 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible Trench MOSF
pmv90ene.pdf

PMV90ENE30 V, N-channel Trench MOSFET20 April 2016 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology ElectroStatic Discha
Datasheet: MGSF1N03LT1G , MGSF2N02ELT1G , NTR1P02LT1G , PMV170UN , PMV185XN , PMV33UPE , PMV50UPE , PMV65UN , NCEP15T14 , QM3001K , QM3007K , WNM2023 , WNM2025 , WNM2027 , WNM2034 , XP151A11B0MR , XP151A12A2MR .
History: SM3381EHQG | SM9926DSK | AP9563GJ | SM2605PSC | STF10N95K5 | RU60D5H | JMSL0301AG
Keywords - PMV90EN MOSFET datasheet
PMV90EN cross reference
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PMV90EN substitution
PMV90EN replacement
History: SM3381EHQG | SM9926DSK | AP9563GJ | SM2605PSC | STF10N95K5 | RU60D5H | JMSL0301AG



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