CM10N60 Datasheet. Specs and Replacement
Type Designator: CM10N60 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 155 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO220A
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CM10N60 substitution
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CM10N60 datasheet
cm10n60f.pdf
R CM10N60F www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 1 LD E 2 1 ... See More ⇒
cm10n60az.pdf
R CM10N60AZ www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 1 LD E 2 ... See More ⇒
Detailed specifications: WNM2034, XP151A11B0MR, XP151A12A2MR, XP151A13A0MR, XP152A11E5MR, XP152A12C0MR, CM100N03, CM10N40, FTP08N06A, CM10N60AFZ, CM10N60AZ, CM10N60F, CM10N65AFZ, CM10N65AZ, CM10N65F, CM10N80P, CM110N055
Keywords - CM10N60 MOSFET specs
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