CM10N60AFZ Datasheet. Specs and Replacement
Type Designator: CM10N60AFZ 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 55 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
Package: TO220FH
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CM10N60AFZ substitution
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CM10N60AFZ datasheet
cm10n60az.pdf
R CM10N60AZ www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 1 LD E 2 ... See More ⇒
cm10n60f.pdf
R CM10N60F www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 1 LD E 2 1 ... See More ⇒
Detailed specifications: XP151A11B0MR, XP151A12A2MR, XP151A13A0MR, XP152A11E5MR, XP152A12C0MR, CM100N03, CM10N40, CM10N60, IRFB31N20D, CM10N60AZ, CM10N60F, CM10N65AFZ, CM10N65AZ, CM10N65F, CM10N80P, CM110N055, CM120N06
Keywords - CM10N60AFZ MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
MOSFET Parameters. How They Affect Each Other
History: TK8A25DA
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