CM10N60AFZ PDF and Equivalents Search

 

CM10N60AFZ Specs and Replacement


   Type Designator: CM10N60AFZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
   Package: TO220FH
 

 CM10N60AFZ substitution

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CM10N60AFZ datasheet

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CM10N60AFZ

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CM10N60AFZ

R CM10N60AZ www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 1 LD E 2 ... See More ⇒

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CM10N60AFZ

R CM10N60F www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 1 LD E 2 1 ... See More ⇒

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CM10N60AFZ

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Detailed specifications: XP151A11B0MR , XP151A12A2MR , XP151A13A0MR , XP152A11E5MR , XP152A12C0MR , CM100N03 , CM10N40 , CM10N60 , IRLB3034 , CM10N60AZ , CM10N60F , CM10N65AFZ , CM10N65AZ , CM10N65F , CM10N80P , CM110N055 , CM120N06 .

History: IXTY1R6N50D2

Keywords - CM10N60AFZ MOSFET specs

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