All MOSFET. IRF620 Datasheet

 

IRF620 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRF620
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 70 W
   Maximum Drain-Source Voltage |Vds|: 200 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 6 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 20 nC
   Rise Time (tr): 70 nS
   Drain-Source Capacitance (Cd): 90 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.8 Ohm
   Package: TO220

 IRF620 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF620 Datasheet (PDF)

 ..1. Size:886K  international rectifier
irf620.pdf

IRF620
IRF620

PD - 94870IRF620PbF Lead-Free12/5/03Document Number: 91027 www.vishay.com1IRF620PbFDocument Number: 91027 www.vishay.com2IRF620PbFDocument Number: 91027 www.vishay.com3IRF620PbFDocument Number: 91027 www.vishay.com4IRF620PbFDocument Number: 91027 www.vishay.com5IRF620PbFDocument Number: 91027 www.vishay.com6IRF620PbFTO-220AB Package Outline

 ..2. Size:202K  international rectifier
irf620pbf.pdf

IRF620
IRF620

IRF620, SiHF620Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.80RoHS* Fast SwitchingQg (Max.) (nC) 14COMPLIANT Ease of ParallelingQgs (nC) 3.0Qgd (nC) 7.9 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD

 ..3. Size:184K  st
irf620.pdf

IRF620
IRF620

IRF620IRF620FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORSTYPE VDSS RDS(on) IDIRF620 200 V

 ..4. Size:508K  st
irf620 irf621 irf622 irf623-fi.pdf

IRF620
IRF620

 ..5. Size:152K  vishay
irf620 sihf620.pdf

IRF620
IRF620

IRF620, SiHF620Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 200Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.80RoHS* Fast SwitchingQg (Max.) (nC) 14COMPLIANT Ease of ParallelingQgs (nC) 3.0Qgd (nC) 7.9 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD

 0.1. Size:881K  1
irf620b irfs620b.pdf

IRF620
IRF620

November 2001IRF620B/IRFS620B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.0A, 200V, RDS(on) = 0.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar, DMOS technology. Low Crss ( typical 10 pF)This advanced technology has been especially tailored to

 0.2. Size:182K  international rectifier
irf620s.pdf

IRF620
IRF620

 0.3. Size:162K  international rectifier
irf620spbf.pdf

IRF620
IRF620

IRF620S, SiHF620SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 200 Definition Surface MountRDS(on) ()VGS = 10 V 0.80 Available in Tape and Reel Qg (Max.) (nC) 14 Dynamic dV/dt RatingQgs (nC) 3.0 Repetitive Avalanche RatedQgd (nC) 7.9 Fast Switching Simple Drive RequirementsConfiguratio

 0.4. Size:247K  international rectifier
irf6201pbf.pdf

IRF620
IRF620

PD - 97500AIRF6201PbFHEXFET Power MOSFETVDS20 VRDS(on) max 2.45 m (@VGS = 4.5V)RDS(on) max 2.75 m(@VGS = 2.5V)Qg (typical)130 nC SO-8ID 27 A(@TA = 25C)Applications OR-ing or hot-swap MOSFET Battery operated DC motor inverter MOSFET System/Load switchFeatures and BenefitsFeatures BenefitsLow RDSon ( 2.45m @ Vgs = 4.5V) Lower

 0.5. Size:873K  international rectifier
irf620b.pdf

IRF620
IRF620

November 2001IRF620B/IRFS620B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.0A, 200V, RDS(on) = 0.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar, DMOS technology. Low Crss ( typical 10 pF)This advanced technology has been especially tailored to

 0.6. Size:875K  fairchild semi
irf620b.pdf

IRF620
IRF620

November 2001IRF620B/IRFS620B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.0A, 200V, RDS(on) = 0.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar, DMOS technology. Low Crss ( typical 10 pF)This advanced technology has been especially tailored to

 0.7. Size:931K  samsung
irf620a.pdf

IRF620
IRF620

Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 0.626 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value

Datasheet: IRF610S , IRF611 , IRF612 , IRF613 , IRF614 , IRF614A , IRF614S , IRF615 , TK10A60D , IRF620A , IRF620FI , IRF620S , IRF621 , IRF6215 , IRF6215L , IRF6215S , IRF622 .

 

 
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