CM10N65AZ Datasheet and Replacement
Type Designator: CM10N65AZ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 55 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
Package: TO220A
CM10N65AZ substitution
CM10N65AZ Datasheet (PDF)
cm10n65az.pdf
RCM10N65AZ www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 650V N-Channel VDMOS RoHS 1 LDE2
cm10n65afz.pdf
RCM10N65AFZ www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 650V N-Channel VDMOS RoHS 1 LDE2 1
cm10n65f.pdf
RCM10N65F www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 650V N-Channel VDMOS RoHS 1 LDE2 12
cm10n60afz.pdf
RC1N0FM06AZ www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 1LDE21 2
Datasheet: XP152A12C0MR , CM100N03 , CM10N40 , CM10N60 , CM10N60AFZ , CM10N60AZ , CM10N60F , CM10N65AFZ , IRF9640 , CM10N65F , CM10N80P , CM110N055 , CM120N06 , CM12N60A , CM12N60AF , CM12N65 , CM12N65A .
Keywords - CM10N65AZ MOSFET datasheet
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History: DMG302PU | TPCF8104
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