CM10N65AZ Specs and Replacement
Type Designator: CM10N65AZ
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 55 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
Package: TO220A
CM10N65AZ substitution
- MOSFET ⓘ Cross-Reference Search
CM10N65AZ datasheet
cm10n65az.pdf
R CM10N65AZ www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 650V N-Channel VDMOS RoHS 1 LD E 2 ... See More ⇒
Detailed specifications: XP152A12C0MR, CM100N03, CM10N40, CM10N60, CM10N60AFZ, CM10N60AZ, CM10N60F, CM10N65AFZ, K2611, CM10N65F, CM10N80P, CM110N055, CM120N06, CM12N60A, CM12N60AF, CM12N65, CM12N65A
Keywords - CM10N65AZ MOSFET specs
CM10N65AZ cross reference
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: SM6029NSK | AGM403D1
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