CM10N80P Datasheet and Replacement
Type Designator: CM10N80P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
Package: TO3PB
CM10N80P substitution
CM10N80P Datasheet (PDF)
cm10n80p.pdf
RC1N0M08P www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 800V N-Channel VDMOS RoHS 121 233
cm10n60afz.pdf
RC1N0FM06AZ www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 1LDE21 2
cm10n65f.pdf
RCM10N65F www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 650V N-Channel VDMOS RoHS 1 LDE2 12
cm10n60f.pdf
RCM10N60F www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 1 LDE2 1
Datasheet: CM10N40 , CM10N60 , CM10N60AFZ , CM10N60AZ , CM10N60F , CM10N65AFZ , CM10N65AZ , CM10N65F , AON7403 , CM110N055 , CM120N06 , CM12N60A , CM12N60AF , CM12N65 , CM12N65A , CM12N65AF , CM12N65F .
History: AO4264C | AOI600A70R | AP4575GM-HF | SFW280N600C4 | IRF9335TRPBF
Keywords - CM10N80P MOSFET datasheet
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History: AO4264C | AOI600A70R | AP4575GM-HF | SFW280N600C4 | IRF9335TRPBF
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