All MOSFET. CM10N80P Datasheet

 

CM10N80P Datasheet and Replacement


   Type Designator: CM10N80P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
   Package: TO3PB
 

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CM10N80P Datasheet (PDF)

 ..1. Size:124K  jdsemi
 cm10n80p.pdf pdf_icon

CM10N80P

RC1N0M08P www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 800V N-Channel VDMOS RoHS 121 233

 9.1. Size:124K  jdsemi
 cm10n60afz.pdf pdf_icon

CM10N80P

RC1N0FM06AZ www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 1LDE21 2

 9.2. Size:125K  jdsemi
 cm10n65f.pdf pdf_icon

CM10N80P

RCM10N65F www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 650V N-Channel VDMOS RoHS 1 LDE2 12

 9.3. Size:127K  jdsemi
 cm10n60f.pdf pdf_icon

CM10N80P

RCM10N60F www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 1 LDE2 1

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History: CM110N055 | HFS12N65SA | HFS10N80A

Keywords - CM10N80P MOSFET datasheet

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