CM10N80P Specs and Replacement
Type Designator: CM10N80P
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
Package: TO3PB
CM10N80P substitution
- MOSFET ⓘ Cross-Reference Search
CM10N80P datasheet
cm10n60f.pdf
R CM10N60F www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 1 LD E 2 1 ... See More ⇒
Detailed specifications: CM10N40, CM10N60, CM10N60AFZ, CM10N60AZ, CM10N60F, CM10N65AFZ, CM10N65AZ, CM10N65F, RU7088R, CM110N055, CM120N06, CM12N60A, CM12N60AF, CM12N65, CM12N65A, CM12N65AF, CM12N65F
Keywords - CM10N80P MOSFET specs
CM10N80P cross reference
CM10N80P equivalent finder
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CM10N80P replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: 2SK1507-01MR | 2SK1519 | CM8N06C
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