All MOSFET. CM110N055 Datasheet

 

CM110N055 MOSFET. Datasheet pdf. Equivalent

Type Designator: CM110N055

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 200 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 110 A

Maximum Junction Temperature (Tj): 175 °C

Drain-Source Capacitance (Cd): 903 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0085 Ohm

Package: TO220

CM110N055 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CM110N055 Datasheet (PDF)

1.1. cm110n055.pdf Size:125K _jdsemi

CM110N055 CM110N055

R CM110N055 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆55V N-Channel Trench-MOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1．主要用途 主要用于 US P 开关电源、汽车安定器 等功率开关电路 2．主要特点 开关速度快 驱动简单，可并联使用 3．封

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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