CM110N055 MOSFET. Datasheet pdf. Equivalent
Type Designator: CM110N055
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 200 W
Maximum Drain-Source Voltage |Vds|: 55 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 110 A
Maximum Junction Temperature (Tj): 175 °C
Drain-Source Capacitance (Cd): 903 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0085 Ohm
Package: TO220
CM110N055 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CM110N055 Datasheet (PDF)
1.1. cm110n055.pdf 
Size:125K _jdsemi
R CM110N055 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆55V N-Channel Trench-MOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1．主要用途 主要用于 US P 开关电源、汽车安定器 等功率开关电路 2．主要特点 开关速度快 驱动简单，可并联使用 3．封
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