All MOSFET. CM110N055 Datasheet

 

CM110N055 MOSFET. Datasheet pdf. Equivalent

Type Designator: CM110N055

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 200 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 110 A

Maximum Junction Temperature (Tj): 175 °C

Drain-Source Capacitance (Cd): 903 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0085 Ohm

Package: TO220

CM110N055 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CM110N055 Datasheet (PDF)

1.1. cm110n055.pdf Size:125K _jdsemi

CM110N055
CM110N055

R CM110N055 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆55V N-Channel Trench-MOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1.主要用途 主要用于 US P 开关电源、汽车安定器 等功率开关电路 2.主要特点 开关速度快 驱动简单,可并联使用 3.封

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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