CM140N04 MOSFET. Datasheet pdf. Equivalent
Type Designator: CM140N04
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 150 W
Maximum Drain-Source Voltage |Vds|: 40 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 140 A
Maximum Junction Temperature (Tj): 175 °C
Drain-Source Capacitance (Cd): 435 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0042 Ohm
Package: TO220
CM140N04 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CM140N04 Datasheet (PDF)
1.1. cm140n04.pdf 
Size:123K _jdsemi
R CM140N04 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆40V N-Channel Trench-MOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1．主要用途 主要用于 US P 开关电源、逆变器 等功率开关电路 2．主要特点 开关速度快 驱动简单，可并联使用 3．封装外形
5.1. cm1400du-24nf.pdf Size:67K _igbt_a
MITSUBISHI IGBT MODULES CM1400DU-24NF HIGH POWER SWITCHING USE CM1400DU-24NF IC ................................................................ 1400A VCES ......................................................... 1200V Insulated Type 2-elements in a pack APPLICATION UPS & General purpose inverters, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm A,B HOUSING Type (J. S. T
5.2. cm1400duc-24s.pdf Size:538K _igbt_a
< IGBT MODULES > CM1400DUC-24S HIGH POWER SWITCHING USE INSULATED TYPE Collector current IC .............…..........................… 1 4 0 0 A Collector-emitter voltage VCES ..........................… 1 2 0 0 V Maximum junction temperature Tjmax .................... 1 7 5 °C ●Flat base Type ●Copper base plate (non-plating) ●RoHS Directive compliant ●Recogniz
Datasheet: CM12N60A , CM12N60AF , CM12N65 , CM12N65A , CM12N65AF , CM12N65F , CM13N50 , CM13N50F , IRF540 , CM15N50 , CM18N20 , CM18N50F , CM18N50P , 1D5N60 , CM1N60 , CM1N60C , CM1N60S .
