CM1N60S Specs and Replacement
Type Designator: CM1N60S
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 0.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 15 Ohm
Package: TO92
CM1N60S substitution
- MOSFET ⓘ Cross-Reference Search
CM1N60S datasheet
cm1n60s.pdf
R CM1N60S www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS ... See More ⇒
cm1n60c.pdf
R C16C MN0 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 1 2 3 TO-251 4 ... See More ⇒
Detailed specifications: CM140N04, CM15N50, CM18N20, CM18N50F, CM18N50P, 1D5N60, CM1N60, CM1N60C, IRF1404, CM1N70, CM20N50, CM20N50F, CM20N50P, CM20N50PZ, CM20N60, CM20N60F, CM20N60P
Keywords - CM1N60S MOSFET specs
CM1N60S cross reference
CM1N60S equivalent finder
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CM1N60S substitution
CM1N60S replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: STH6N95K5-2 | 2SJ360 | KHB8D8N25F | SRC60R075BS
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