CM1N60S Datasheet and Replacement
Type Designator: CM1N60S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 0.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 15 Ohm
Package: TO92
CM1N60S substitution
CM1N60S Datasheet (PDF)
cm1n60s.pdf

RCM1N60S www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS
cm1n60.pdf

RC16MN0 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 12 3TO-92 4
cm1n60c.pdf

RC16CMN0 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 12 3TO-251 4
Datasheet: CM140N04 , CM15N50 , CM18N20 , CM18N50F , CM18N50P , 1D5N60 , CM1N60 , CM1N60C , IRF1404 , CM1N70 , CM20N50 , CM20N50F , CM20N50P , CM20N50PZ , CM20N60 , CM20N60F , CM20N60P .
Keywords - CM1N60S MOSFET datasheet
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