CM4N65C Datasheet and Replacement
Type Designator: CM4N65C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO251 TO252
- MOSFET Cross-Reference Search
CM4N65C Datasheet (PDF)
cm4n65c.pdf
RCM4N65C www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 650V N-Channel VDMOS RoHS 1 LDE 2 TO-251 TO-25
cm4n65f.pdf
RCM4N65F www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 650V N-Channel VDMOS RoHS 1 LDE 2 1 2 3
cm4n60c.pdf
RCM4N60C www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS
cm4n60f.pdf
RCM4N60F www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 1 LDE 2 1 23
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: FCPF7N60YDTU | H7N1002LM | AP6679GI-HF | DM12N65C | SPD04N60S5 | SM6A12NSFP
Keywords - CM4N65C MOSFET datasheet
CM4N65C cross reference
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History: FCPF7N60YDTU | H7N1002LM | AP6679GI-HF | DM12N65C | SPD04N60S5 | SM6A12NSFP
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