CM4N65C Datasheet and Replacement
Type Designator: CM4N65C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO251 TO252
CM4N65C substitution
CM4N65C Datasheet (PDF)
cm4n65c.pdf
RCM4N65C www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 650V N-Channel VDMOS RoHS 1 LDE 2 TO-251 TO-25
cm4n65f.pdf
RCM4N65F www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 650V N-Channel VDMOS RoHS 1 LDE 2 1 2 3
cm4n60c.pdf
RCM4N60C www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS
cm4n60f.pdf
RCM4N60F www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 1 LDE 2 1 23
Datasheet: CM2N80C , CM2N80F , CM30N40PZ , CM3N50C , CM40N20 , CM4N60 , CM4N60C , CM4N60F , IRLB4132 , CM4N65F , CM50N06 , CM55N06 , CM5N50 , CM5N50C , CM5N50F , CM5N80F , CM60N03 .
History: FDG6303N | IPD60R280CFD7 | 2SK3085 | IPD60R600P7 | H02N60SI | IPD60R360P7 | IPD60R360P7S
Keywords - CM4N65C MOSFET datasheet
CM4N65C cross reference
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CM4N65C replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: FDG6303N | IPD60R280CFD7 | 2SK3085 | IPD60R600P7 | H02N60SI | IPD60R360P7 | IPD60R360P7S
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