CM55N06 Datasheet and Replacement
Type Designator: CM55N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 130 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Id| ⓘ - Maximum Drain Current: 55 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Cossⓘ - Output Capacitance: 222 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: TO220
CM55N06 substitution
CM55N06 Datasheet (PDF)
cm55n06.pdf
RCM55N06 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 60V N-Channel Trench-MOS RoHS 1 2 3 TO-220 4
Datasheet: CM3N50C , CM40N20 , CM4N60 , CM4N60C , CM4N60F , CM4N65C , CM4N65F , CM50N06 , IRFP260 , CM5N50 , CM5N50C , CM5N50F , CM5N80F , CM60N03 , CM60N03C , CM6N40 , CM6N40C .
History: IPD60R280P7 | 2SJ492 | IPA60R600CP | H07N60E | IPA65R280C6 | NCEP6020AS
Keywords - CM55N06 MOSFET datasheet
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: IPD60R280P7 | 2SJ492 | IPA60R600CP | H07N60E | IPA65R280C6 | NCEP6020AS
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