CM7N60 Datasheet and Replacement
Type Designator: CM7N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 110 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.25 Ohm
Package: TO220A
CM7N60 substitution
CM7N60 Datasheet (PDF)
cm7n60 to220a.pdf
RCM7N60 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 1 LDE2 3
cm7n60f.pdf
RCM7N60F www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 600V N-Channel VDMOS RoHS 1 LDE2 12
cm7n65f.pdf
RC76FMN5 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 650V N-Channel VDMOS RoHS 1LDE2 12
Datasheet: CM5N50F , CM5N80F , CM60N03 , CM60N03C , CM6N40 , CM6N40C , CM6N60 , CM6N60F , AON7506 , CM7N60F , CM7N65F , CM84N06 , CM8N06C , CM8N50 , CM8N50F , CM8N60 , CM8N60F .
History: JMSH1018AE | PSMN7R6-100BSE | IRFPS43N50K | DM616 | AOD464 | BSS123N | APT31M100B2
Keywords - CM7N60 MOSFET datasheet
CM7N60 cross reference
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History: JMSH1018AE | PSMN7R6-100BSE | IRFPS43N50K | DM616 | AOD464 | BSS123N | APT31M100B2
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