CM84N06 MOSFET. Datasheet pdf. Equivalent
Type Designator: CM84N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 200 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 84 A
Maximum Junction Temperature (Tj): 175 °C
Drain-Source Capacitance (Cd): 375 pF
Maximum Drain-Source On-State Resistance (Rds): 0.01 Ohm
Package: TO220
CM84N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CM84N06 Datasheet (PDF)
cm84n06.pdf
RCM84N06 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 60V N-Channel Trench-MOS RoHS 1 2 3 TO-220 4
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: HY3408AM
History: HY3408AM
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