CM8N06C Datasheet and Replacement
Type Designator: CM8N06C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: TO251 TO252
CM8N06C substitution
CM8N06C Datasheet (PDF)
cm8n06c.pdf

RCM8N06C www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 60V N-Channel Trench-MOS RoHS 1 2 TO-251 TO-252 1
Datasheet: CM6N40 , CM6N40C , CM6N60 , CM6N60F , CM7N60 , CM7N60F , CM7N65F , CM84N06 , IRFP250 , CM8N50 , CM8N50F , CM8N60 , CM8N60F , CM8N65F , CM8N80 , CM8N80F , CM9N20 .
History: DMG1012UW | DMN1006UCA6 | AP4438GYT-HF | 2N65KG-TF3-T | KHB1D0N70G | SWP068R08ET | KHB1D9N60I
Keywords - CM8N06C MOSFET datasheet
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History: DMG1012UW | DMN1006UCA6 | AP4438GYT-HF | 2N65KG-TF3-T | KHB1D0N70G | SWP068R08ET | KHB1D9N60I



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