CM8N06C MOSFET. Datasheet pdf. Equivalent
Type Designator: CM8N06C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 60 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 8 A
Maximum Junction Temperature (Tj): 150 °C
Maximum Drain-Source On-State Resistance (Rds): 0.2 Ohm
Package: TO251_TO252
CM8N06C Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CM8N06C PDF doc:
1.1. cm8n06c.pdf 
Size:130K _jdsemi
R CM8N06C 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆60V N-Channel Trench-MOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1．主要用途 主要用于电子镇流器、低功率 开关电源等功率开关电路 2．主要特点 开关速度快 TO-251 TO-252 低栅极电荷量 1栅
Datasheet: CM6N40 , CM6N40C , CM6N60 , CM6N60F , CM7N60 , CM7N60F , CM7N65F , CM84N06 , J112 , CM8N50 , CM8N50F , CM8N60 , CM8N60F , CM8N65F , CM8N80 , CM8N80F , CM9N20 .
