IRLR9343TR Specs and Replacement
Type Designator: IRLR9343TR
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 38.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 130 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: TO252
IRLR9343TR substitution
- MOSFET ⓘ Cross-Reference Search
IRLR9343TR datasheet
irlr9343tr.pdf
IRLR9343TR www.VBsemi.tw P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ) Definition 0.053 at VGS = - 10 V - 25 TrenchFET Power MOSFET - 60 26 0.062 at VGS = - 4.5 V - 20 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS High Side Switch for Full Bridge C... See More ⇒
irlr9343pbf irlu9343pbf irlu9343-701pbf.pdf
PD - 95386A DIGITAL AUDIO MOSFET IRLR9343PbF IRLU9343PbF IRLU9343-701PbF Features l Advanced Process Technology Key Parameters l Key Parameters Optimized for Class-D Audio Amplifier Applications VDS -55 V l Low RDSON for Improved Efficiency RDS(ON) typ. @ VGS = -10V m 93 l Low Qg and Qsw for Better THD and Improved RDS(ON) typ. @ VGS = -4.5V m 150 Efficiency Qg typ. l Low ... See More ⇒
irlr9343pbf irlu9343pbf.pdf
PD - 95386A DIGITAL AUDIO MOSFET IRLR9343PbF IRLU9343PbF IRLU9343-701PbF Features l Advanced Process Technology Key Parameters l Key Parameters Optimized for Class-D Audio Amplifier Applications VDS -55 V l Low RDSON for Improved Efficiency RDS(ON) typ. @ VGS = -10V m 93 l Low Qg and Qsw for Better THD and Improved RDS(ON) typ. @ VGS = -4.5V m 150 Efficiency Qg typ. l Low ... See More ⇒
irlu9343-701 irlr9343.pdf
PD - 95850 DIGITAL AUDIO MOSFET IRLR9343 IRLU9343 IRLU9343-701 Features l Advanced Process Technology Key Parameters l Key Parameters Optimized for Class-D Audio Amplifier Applications VDS -55 V l Low RDSON for Improved Efficiency RDS(ON) typ. @ VGS = -10V m 93 l Low Qg and Qsw for Better THD and Improved RDS(ON) typ. @ VGS = -4.5V m 150 Efficiency Qg typ. l Low Qrr for ... See More ⇒
Detailed specifications: CM8N80F, CM9N20, CM9N90PZ, CS100N08A8, CS100N03B8, CS100N03FB9, CS10N50A8R, CS10N50FA9R, 18N50, CS10N60A8R, HGE055NE4A, CS10N60FA9R, VBA5638, CS10N65A8R, GN10N65A4, CS10N65FA9R, VBA5311
Keywords - IRLR9343TR MOSFET specs
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