All MOSFET. HGE055NE4A Datasheet

 

HGE055NE4A Datasheet and Replacement


   Type Designator: HGE055NE4A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 45 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 18 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 493 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: SOP8
 

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HGE055NE4A Datasheet (PDF)

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HGE055NE4A

Silicon N-Channel Power MOSFET R HGE055NE4A General Description VDSS 45 V HGE055NE4A, the silicon N-channel Enhanced ID 18 A PD(Ta=25) 3.1 W VDMOSFETs, is obtained by the high density Trench technology RDS(ON) Typ@Vgs=10V 4.4 m which reduce the conduction loss, improve switching RDS(ON) Typ@Vgs=4.5V 6.5 m performance and enhance the avalanche energy. The

Datasheet: CM9N90PZ , CS100N08A8 , CS100N03B8 , CS100N03FB9 , CS10N50A8R , CS10N50FA9R , IRLR9343TR , CS10N60A8R , IRF520 , CS10N60FA9R , VBA5638 , CS10N65A8R , GN10N65A4 , CS10N65FA9R , VBA5311 , CS7N70A4R-G , VBA3638 .

History: VBA5638 | PE537BA

Keywords - HGE055NE4A MOSFET datasheet

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