HGE055NE4A Datasheet and Replacement
Type Designator: HGE055NE4A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 45 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 18 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 24 nC
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 493 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: SOP8
HGE055NE4A substitution
HGE055NE4A Datasheet (PDF)
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hge055ne4a.pdf
hge055ne4a.pdf
Silicon N-Channel Power MOSFET R HGE055NE4A General Description VDSS 45 V HGE055NE4A, the silicon N-channel Enhanced ID 18 A PD(Ta=25) 3.1 W VDMOSFETs, is obtained by the high density Trench technology RDS(ON) Typ@Vgs=10V 4.4 m which reduce the conduction loss, improve switching RDS(ON) Typ@Vgs=4.5V 6.5 m performance and enhance the avalanche energy. The
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