All MOSFET. VBA5638 Datasheet

 

VBA5638 Datasheet and Replacement


   Type Designator: VBA5638
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 65 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: SO8
 

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VBA5638 Datasheet (PDF)

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VBA5638

VBA5638www.VBsemi.comN- and P-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.028 at VGS = 10 V 5.3 TrenchFET Power MOSFETN-Channel 60 6 nC0.031 at VGS = 4.5 V 4.7 100 % Rg and UIS Tested0.050 at VGS = - 10 V - 4.9APPLICATIONSP-Channel - 60 8 nC0.060 at VGS

Datasheet: CS100N03B8 , CS100N03FB9 , CS10N50A8R , CS10N50FA9R , IRLR9343TR , CS10N60A8R , HGE055NE4A , CS10N60FA9R , IRF2807 , CS10N65A8R , GN10N65A4 , CS10N65FA9R , VBA5311 , CS7N70A4R-G , VBA3638 , CS10N80AND , CS7N65FA9D .

History: AM9945NE | IPB120N08S4-03 | SQM90142E | CS65N20-30 | C3M0065100K | DMG8880LSS | IXFV110N10P

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