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VBA5638 Specs and Replacement

Type Designator: VBA5638

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 65 nS

Cossⓘ - Output Capacitance: 75 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm

Package: SO8

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VBA5638 datasheet

 ..1. Size:614K  cn vbsemi
 vba5638.pdf pdf_icon

VBA5638

VBA5638 www.VBsemi.com N- and P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.028 at VGS = 10 V 5.3 TrenchFET Power MOSFET N-Channel 60 6 nC 0.031 at VGS = 4.5 V 4.7 100 % Rg and UIS Tested 0.050 at VGS = - 10 V - 4.9 APPLICATIONS P-Channel - 60 8 nC 0.060 at VGS ... See More ⇒

Detailed specifications: CS100N03B8, CS100N03FB9, CS10N50A8R, CS10N50FA9R, IRLR9343TR, CS10N60A8R, HGE055NE4A, CS10N60FA9R, STF13NM60N, CS10N65A8R, GN10N65A4, CS10N65FA9R, VBA5311, CS7N70A4R-G, VBA3638, CS10N80AND, CS7N65FA9D

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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