VBA5311 PDF and Equivalents Search

 

VBA5311 Specs and Replacement

Type Designator: VBA5311

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 745 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm

Package: SO8

VBA5311 substitution

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VBA5311 datasheet

 ..1. Size:664K  cn vbsemi
 vba5311.pdf pdf_icon

VBA5311

VBA5311 www.VBsemi.com N- and P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Definition ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.011 at VGS = 10 V 11 100 % Rg and UIS Tested N-Channel 30 13.3 Compliant to RoHS Directive 2002/95/EC 0.014 at VGS = 4.5 V 10 APPLICATIONS 0.017 at VGS = - 10 V... See More ⇒

 9.1. Size:709K  cn vbsemi
 vba5325.pdf pdf_icon

VBA5311

VBA5325 www.VBsemi.com N- and P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Definition ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.018 at VGS = 10 V 8e 100 % Rg and UIS Tested N-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC 0.024 at VGS = 4.5 V 8e 0.032 at VGS... See More ⇒

Detailed specifications: IRLR9343TR, CS10N60A8R, HGE055NE4A, CS10N60FA9R, VBA5638, CS10N65A8R, GN10N65A4, CS10N65FA9R, P60NF06, CS7N70A4R-G, VBA3638, CS10N80AND, CS7N65FA9D, VBA3316, VBA3222, CS12N60A8R, CS6N80ARR-G

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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