All MOSFET. VBA5311 Datasheet

 

VBA5311 MOSFET. Datasheet pdf. Equivalent


   Type Designator: VBA5311
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 8.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 13.3 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 745 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: SO8

 VBA5311 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VBA5311 Datasheet (PDF)

 ..1. Size:664K  cn vbsemi
 vba5311.pdf

VBA5311 VBA5311

VBA5311www.VBsemi.comN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.011 at VGS = 10 V 11 100 % Rg and UIS TestedN-Channel 30 13.3 Compliant to RoHS Directive 2002/95/EC0.014 at VGS = 4.5 V 10APPLICATIONS0.017 at VGS = - 10 V

 9.1. Size:709K  cn vbsemi
 vba5325.pdf

VBA5311 VBA5311

VBA5325www.VBsemi.comN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.018 at VGS = 10 V 8e 100 % Rg and UIS TestedN-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = 4.5 V 8e0.032 at VGS

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IRFF130

 

 
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