All MOSFET. CS10N70F_A9D Datasheet

 

CS10N70F_A9D MOSFET. Datasheet pdf. Equivalent

Type Designator: CS10N70F_A9D

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 700 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 10 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 25 nS

Drain-Source Capacitance (Cd): 155 pF

Maximum Drain-Source On-State Resistance (Rds): 0.9 Ohm

Package: TO220F

CS10N70F_A9D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

CS10N70F_A9D Datasheet (PDF)

1.1. cs10n70f a9d.pdf Size:348K _crhj

CS10N70F_A9D
CS10N70F_A9D

Silicon N-Channel Power MOSFET R ○ CS10N70F A9D VDSS 700 V General Description: ID 10 A CS10N70F A9D, the silicon N-channel Enhanced PD (TC=25℃) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.78 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou

2.1. cs10n70fa9d.pdf Size:348K _update_mosfet

CS10N70F_A9D
CS10N70F_A9D

Silicon N-Channel Power MOSFET R ○ CS10N70F A9D VDSS 700 V General Description: ID 10 A CS10N70F A9D, the silicon N-channel Enhanced PD (TC=25℃) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.78 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou

 3.1. cs10n70a8d.pdf Size:350K _update_mosfet

CS10N70F_A9D
CS10N70F_A9D

Silicon N-Channel Power MOSFET R ○ CS10N70 A8D VDSS 700 V General Description: ID 10 A CS10N70 A8HD, the silicon N-channel Enhanced PD (TC=25℃) 130 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.78 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

3.2. cs10n70 a8d.pdf Size:350K _crhj

CS10N70F_A9D
CS10N70F_A9D

Silicon N-Channel Power MOSFET R ○ CS10N70 A8D VDSS 700 V General Description: ID 10 A CS10N70 A8HD, the silicon N-channel Enhanced PD (TC=25℃) 130 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.78 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

Datasheet: 2P7145B-IM , 2P7145B-5-IM , 2P7172A , 2P7172A-5 , 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , IRF1010E , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 .

 
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