VBA3222 MOSFET Datasheet: N-Ch, 20V, 7.1A. Full specification with pinout and replacement list

VBA3222 Specs and Replacement

Type Designator: VBA3222

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 7.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: SO8

VBA3222 substitution

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VBA3222 datasheet

..1. Size:469K cn vbsemi
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VBA3222 www.VBsemi.com Dual N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.025 at VGS = 4.5 V 7.1 TrenchFET Power MOSFET 20 0.035 at VGS = 2.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC SO-8 D1 D2 S1 1 D1 8 G1 2 D1 7 S2 3 D2 6 G1 G2 G2 4 D2... See More ⇒

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VBA3211 www.VBsemi.com Dual N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.009 at VGS = 4.5 V 10 TrenchFET Power MOSFET 20 15 nC 100 % UIS Tested 0.012 at VGS = 2.5 V 8.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Set Top Box L... See More ⇒

Detailed specifications: GN10N65A4, CS10N65FA9R, VBA5311, CS7N70A4R-G, VBA3638, CS10N80AND, CS7N65FA9D, VBA3316, 7N60, CS12N60A8R, CS6N80ARR-G, VBA2658, CS12N60FA9R, VBA2333, CS12N65A8R, CS5N65FA9R, CS12N65FA9R