All MOSFET. VBA3222 Datasheet

 

VBA3222 Datasheet and Replacement


   Type Designator: VBA3222
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 7.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: SO8
 

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VBA3222 Datasheet (PDF)

 ..1. Size:469K  cn vbsemi
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VBA3222

VBA3222www.VBsemi.comDual N-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.025 at VGS = 4.5 V 7.1 TrenchFET Power MOSFET200.035 at VGS = 2.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECSO-8 D1 D2S1 1 D18G1 2 D17S2 3 D26G1 G2G2 4 D2

 9.1. Size:631K  cn vbsemi
 vba3211.pdf pdf_icon

VBA3222

VBA3211www.VBsemi.comDual N-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.009 at VGS = 4.5 V 10 TrenchFET Power MOSFET20 15 nC 100 % UIS Tested0.012 at VGS = 2.5 V 8.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Set Top Box L

Datasheet: GN10N65A4 , CS10N65FA9R , VBA5311 , CS7N70A4R-G , VBA3638 , CS10N80AND , CS7N65FA9D , VBA3316 , MMIS60R580P , CS12N60A8R , CS6N80ARR-G , VBA2658 , CS12N60FA9R , VBA2333 , CS12N65A8R , CS5N65FA9R , CS12N65FA9R .

History: S85N042S | P3606BEA | 8205B | UPA1913 | 7NM70G-TMN2-T | CP643 | SVS7N60DD2TR

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