All MOSFET. VB264K Datasheet

 

VB264K Datasheet and Replacement


   Type Designator: VB264K
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.185 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 10 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 9 Ohm
   Package: SOT23
 

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VB264K Datasheet (PDF)

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VB264K

VB264Kwww.VBsemi.comP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () VGS(th) (V) ID (mA)Definition TrenchFET Power MOSFET- 60 4 at VGS = - 10 V - 1 to - 3 - 185 High-Side Switching Low On-Resistance: 4 Low Threshold: - 2 V (typ.) Fast Swtiching Speed: 20 ns (typ.) Low

Datasheet: VBA1328 , CS16N60FA9H , VBA1104N , VBA1158N , VBA1101M , CS5N60A4H , CS55N06A4 , VB2355 , IRFP460 , VB1695 , VB2103K , SI2318CDS-T1-GE3 , SI2318DS-T1-GE3 , SI2319CDS-T1-GE3 , SI2319DS-T1-GE3 , SI2323CDS-T1-GE3 , SI2323DDS-T1-GE3 .

History: 2SK3919-ZK | IRFH6200

Keywords - VB264K MOSFET datasheet

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