All MOSFET. VB2103K Datasheet

 

VB2103K Datasheet and Replacement


   Type Designator: VB2103K
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.65 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.23 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 6 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.8 Ohm
   Package: SOT23
 

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VB2103K Datasheet (PDF)

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VB2103K

VB2103Kwww.VBsemi.comP-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Available3.0 at VGS = - 10 V - 0.30 TrenchFET Power MOSFET- 100 3.03.6 at VGS = - 4.5 V - 0.26 Ultra Low On-Resistance Small SizeAPPLICATIONS Active Clamp Circuits in DC/DC Power SuppliesTO-236(SO

Datasheet: VBA1104N , VBA1158N , VBA1101M , CS5N60A4H , CS55N06A4 , VB2355 , VB264K , VB1695 , IRFP260N , SI2318CDS-T1-GE3 , SI2318DS-T1-GE3 , SI2319CDS-T1-GE3 , SI2319DS-T1-GE3 , SI2323CDS-T1-GE3 , SI2323DDS-T1-GE3 , SI2323DS-T1 , SI2338DS-T1-GE3 .

History: STL60N32N3LL | IXTQ10P50P | TK65S04K3L | HM4444 | SM1F12NSKP | TPB65R070D | LPM9040A

Keywords - VB2103K MOSFET datasheet

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