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VB2103K Specs and Replacement

Type Designator: VB2103K

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.65 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.23 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 6 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.8 Ohm

Package: SOT23

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VB2103K datasheet

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VB2103K

VB2103K www.VBsemi.com P-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Available 3.0 at VGS = - 10 V - 0.30 TrenchFET Power MOSFET - 100 3.0 3.6 at VGS = - 4.5 V - 0.26 Ultra Low On-Resistance Small Size APPLICATIONS Active Clamp Circuits in DC/DC Power Supplies TO-236 (SO... See More ⇒

Detailed specifications: VBA1104N, VBA1158N, VBA1101M, CS5N60A4H, CS55N06A4, VB2355, VB264K, VB1695, IRLZ44N, SI2318CDS-T1-GE3, SI2318DS-T1-GE3, SI2319CDS-T1-GE3, SI2319DS-T1-GE3, SI2323CDS-T1-GE3, SI2323DDS-T1-GE3, SI2323DS-T1, SI2338DS-T1-GE3

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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