SI2319CDS-T1-GE3 MOSFET Datasheet: P-Ch, 30V, 5.4A. Full specification with pinout and replacement list

SI2319CDS-T1-GE3 Specs and Replacement

Type Designator: SI2319CDS-T1-GE3

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm

Package: SOT23

SI2319CDS-T1-GE3 substitution

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SI2319CDS-T1-GE3 datasheet

0.1. Size:866K cn vbsemi
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SI2319CDS-T1-GE3 www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter ... See More ⇒

5.1. Size:225K vishay
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Si2319CDS Vishay Siliconix P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition TrenchFET Power MOSFET 0.077 at VGS = - 10 V - 4.4 - 40 7 nC 100 % Rg Tested 0.108 at VGS = - 4.5 V - 3.7 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch DC/DC ... See More ⇒

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