All MOSFET. SI2319CDS-T1-GE3 Datasheet

 

SI2319CDS-T1-GE3 Datasheet and Replacement


   Type Designator: SI2319CDS-T1-GE3
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: SOT23
 

 SI2319CDS-T1-GE3 substitution

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SI2319CDS-T1-GE3 Datasheet (PDF)

 0.1. Size:866K  cn vbsemi
 si2319cds-t1-ge3.pdf pdf_icon

SI2319CDS-T1-GE3

SI2319CDS-T1-GE3www.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter

 5.1. Size:225K  vishay
 si2319cds.pdf pdf_icon

SI2319CDS-T1-GE3

Si2319CDSVishay SiliconixP-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition TrenchFET Power MOSFET0.077 at VGS = - 10 V - 4.4- 40 7 nC 100 % Rg Tested0.108 at VGS = - 4.5 V - 3.7 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch DC/DC

 6.1. Size:222K  vishay
 si2319cd.pdf pdf_icon

SI2319CDS-T1-GE3

Si2319CDSVishay SiliconixP-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition TrenchFET Power MOSFET0.077 at VGS = - 10 V - 4.4- 40 7 nC 100 % Rg Tested0.108 at VGS = - 4.5 V - 3.7 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch DC/DC

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Datasheet: CS5N60A4H , CS55N06A4 , VB2355 , VB264K , VB1695 , VB2103K , SI2318CDS-T1-GE3 , SI2318DS-T1-GE3 , 10N60 , SI2319DS-T1-GE3 , SI2323CDS-T1-GE3 , SI2323DDS-T1-GE3 , SI2323DS-T1 , SI2338DS-T1-GE3 , CS4N80FA9HD , VB2290 , CS4N80A4HD-G .

History: NCEP40T35ALL | P0260AI

Keywords - SI2319CDS-T1-GE3 MOSFET datasheet

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