All MOSFET. VB8338 Datasheet

 

VB8338 Datasheet and Replacement


   Type Designator: VB8338
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: TSOP6
 

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VB8338 Datasheet (PDF)

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VB8338

VB8338www.VBsemi.comP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET- 30 5.1 nC0.054 at VGS = - 4.5 V - 4.1APPLICATIONS Load SwitchTSOP-6(4) STop V iew1 6(3) G3 mm523 4(1, 2, 5, 6) D2.85 mmP-Cha

Datasheet: SI2319DS-T1-GE3 , SI2323CDS-T1-GE3 , SI2323DDS-T1-GE3 , SI2323DS-T1 , SI2338DS-T1-GE3 , CS4N80FA9HD , VB2290 , CS4N80A4HD-G , 2SK3878 , CS4N80A3HD-G , CS4N70FA9R , VBA1615 , VBA1630 , CS24N40FA9H , CS24N50ANHD , CS25N06B3 , CS25N06B4 .

History: AFC1563 | TK6A53D | IRFH5300 | WMB060N10LGS | AUIRLR3705Z | IRFPF40 | MS23N36

Keywords - VB8338 MOSFET datasheet

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