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VB8338 Specs and Replacement

Type Designator: VB8338

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 80 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm

Package: TSOP6

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VB8338 datasheet

 ..1. Size:564K  cn vbsemi
 vb8338.pdf pdf_icon

VB8338

VB8338 www.VBsemi.com P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET - 30 5.1 nC 0.054 at VGS = - 4.5 V - 4.1 APPLICATIONS Load Switch TSOP-6 (4) S Top V iew 1 6 (3) G 3 mm 5 2 3 4 (1, 2, 5, 6) D 2.85 mm P-Cha... See More ⇒

Detailed specifications: SI2319DS-T1-GE3, SI2323CDS-T1-GE3, SI2323DDS-T1-GE3, SI2323DS-T1, SI2338DS-T1-GE3, CS4N80FA9HD, VB2290, CS4N80A4HD-G, 8205A, CS4N80A3HD-G, CS4N70FA9R, VBA1615, VBA1630, CS24N40FA9H, CS24N50ANHD, CS25N06B3, CS25N06B4

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