All MOSFET. CS460FA9H Datasheet

 

CS460FA9H Datasheet and Replacement


   Type Designator: CS460FA9H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 85 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 63 nC
   tr ⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 285 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO220F
 

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CS460FA9H Datasheet (PDF)

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CS460FA9H

Silicon N-Channel Power MOSFET R CS460F A9H General Description VDSS 500 V CS460F A9H, the silicon N-channel Enhanced ID 20 A PD (TC=25) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.25 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 9.1. Size:1412K  blue-rocket-elect
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CS460FA9H

BRCS4606HSC Rev.B Mar.-2022 DATA SHEET / Descriptions SOP-8 MOS Complementary Enhancement MOSFET in a SOP-8 Plastic Package. / Features N-channel P-channel VDS(V)=30V VDS(V)=-30V ID=6.9A ID=-6.0A RDS(ON)

 9.2. Size:2249K  blue-rocket-elect
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CS460FA9H

BRCS4606SC Rev.E Oct.-2018 DATA SHEET / Descriptions SOP-8 MOS Complementary Enhancement MOSFET in a SOP-8 Plastic Package. / Features N-channel P-channelVDS(V)=30V VDS(V)=-30V ID=6.9A ID=-6A RDS(ON)

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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