CS460FA9H MOSFET Datasheet: N-Ch, 500V, 20A. Full specification with pinout and replacement list

CS460FA9H Specs and Replacement

Type Designator: CS460FA9H

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 85 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 75 nS

Cossⓘ - Output Capacitance: 285 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: TO220F

CS460FA9H substitution

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CS460FA9H datasheet

..1. Size:229K wuxi china
cs460fa9h.pdf pdf_icon

Silicon N-Channel Power MOSFET R CS460F A9H General Description VDSS 500 V CS460F A9H, the silicon N-channel Enhanced ID 20 A PD (TC=25 ) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.25 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po... See More ⇒

9.1. Size:1412K blue-rocket-elect
brcs4606hsc.pdf pdf_icon

BRCS4606HSC Rev.B Mar.-2022 DATA SHEET / Descriptions SOP-8 MOS Complementary Enhancement MOSFET in a SOP-8 Plastic Package. / Features N-channel P-channel VDS(V)=30V VDS(V)=-30V ID=6.9A ID=-6.0A RDS(ON)... See More ⇒

9.2. Size:2249K blue-rocket-elect
brcs4606sc.pdf pdf_icon

BRCS4606SC Rev.E Oct.-2018 DATA SHEET / Descriptions SOP-8 MOS Complementary Enhancement MOSFET in a SOP-8 Plastic Package. / Features N-channel P-channel VDS(V)=30V VDS(V)=-30V ID=6.9A ID=-6A RDS(ON)... See More ⇒

Detailed specifications: CS24N50ANHD, CS25N06B3, CS25N06B4, CS25N06B8, CS4N65FA9HD, CS4N65A3HD1-G, SI2369DS-T1, SI2399CDS-T1, IRFP260, SI3407DV-T1, SI3456DDV-T1, SI3460DV-T1, SI3477DV-T1-GE3, SI3585DV-T1, CS2N70A3R1-G, SDM9433, SDM9435A