All MOSFET. SDM9926 Datasheet

 

SDM9926 Datasheet and Replacement


   Type Designator: SDM9926
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 7.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: SO8
 
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SDM9926 Datasheet (PDF)

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SDM9926

SDM9926www.VBsemi.twDual N-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.025 at VGS = 4.5 V 7.1 TrenchFET Power MOSFET200.035 at VGS = 2.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECSO-8 D1 D2S1 1 D18G1 2 D17S2 3 D26G1 G2G2 4 D2

Datasheet: SI3407DV-T1 , SI3456DDV-T1 , SI3460DV-T1 , SI3477DV-T1-GE3 , SI3585DV-T1 , CS2N70A3R1-G , SDM9433 , SDM9435A , IRF530 , CS2N80A3HY , NP32N055I , CS45N06A4 , SUD25N06-45L , CS3410B4 , CS3410BR , RSS065N06 , RSS090P03 .

History: IRFL110PBF | HUF76145P3 | 2SK2349

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