SDM9926 Datasheet. Specs and Replacement

Type Designator: SDM9926  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 7.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: SO8

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SDM9926 datasheet

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SDM9926

SDM9926 www.VBsemi.tw Dual N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.025 at VGS = 4.5 V 7.1 TrenchFET Power MOSFET 20 0.035 at VGS = 2.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC SO-8 D1 D2 S1 1 D1 8 G1 2 D1 7 S2 3 D2 6 G1 G2 G2 4 D2 ... See More ⇒

Detailed specifications: SI3407DV-T1, SI3456DDV-T1, SI3460DV-T1, SI3477DV-T1-GE3, SI3585DV-T1, CS2N70A3R1-G, SDM9433, SDM9435A, IRFB3607, CS2N80A3HY, NP32N055I, CS45N06A4, SUD25N06-45L, CS3410B4, CS3410BR, RSS065N06, RSS090P03

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