CS2N80A3HY Datasheet and Replacement
Type Designator: CS2N80A3HY
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5.9 nS
Cossⓘ - Output Capacitance: 40 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 6.3 Ohm
Package: TO251
CS2N80A3HY Datasheet (PDF)
cs2n80 a3hy.pdf

Silicon N-Channel Power MOSFET R CS2N80 A3HY General Description VDSS 800 V CS2N80 A3HY, the silicon N-channel Enhanced ID 2.0 A PD (TC=25) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 4.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po
Datasheet: SI3456DDV-T1 , SI3460DV-T1 , SI3477DV-T1-GE3 , SI3585DV-T1 , CS2N70A3R1-G , SDM9433 , SDM9435A , SDM9926 , AON7506 , NP32N055I , CS45N06A4 , SUD25N06-45L , CS3410B4 , CS3410BR , RSS065N06 , RSS090P03 , CS3N40A23 .
History: 11NM70G-TN3-R | IPB032N10N5
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History: 11NM70G-TN3-R | IPB032N10N5



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