All MOSFET. CS45N06A4 Datasheet

 

CS45N06A4 Datasheet and Replacement


   Type Designator: CS45N06A4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 54.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 45 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25.1 nS
   Cossⓘ - Output Capacitance: 135 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: TO252
 

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CS45N06A4 Datasheet (PDF)

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CS45N06A4

Silicon N-Channel Power MOSFET R CS45N06 A4 anGeneral Description VDSS 60 V CS45N06 A4 the silicon N-channel Enhanced ID 45 A VDMOSFETs, is obtained by the high density Trench RDS(ON)Typ 12 m technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM appli

Datasheet: SI3477DV-T1-GE3 , SI3585DV-T1 , CS2N70A3R1-G , SDM9433 , SDM9435A , SDM9926 , CS2N80A3HY , NP32N055I , AO4407 , SUD25N06-45L , CS3410B4 , CS3410BR , RSS065N06 , RSS090P03 , CS3N40A23 , CS3N40A3H , CS3N40A4H .

History: R6007JND3

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