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VB3222 Specs and Replacement

Type Designator: VB3222

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.14 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 3.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 45 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: TSOP6

VB3222 substitution

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VB3222 datasheet

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VB3222

VB3222 www.VBsemi.com Dual N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.022 at VGS = 4.5 V TrenchFET Power MOSFET 4.8 20 1.8 nC 100 % Rg Tested 0.028 at VGS = 2.5 V 3.3 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch for Portable Applicati... See More ⇒

Detailed specifications: RSS090P03, CS3N40A23, CS3N40A3H, CS3N40A4H, CS3N50B3, ISL9N306AS3S, CS3N50B4, VB2703K, 10N65, VB4290, VB5222, CS3N90A3H1-G, RTR025N05T, RYU002N05T306, CS3N80ARH, NTD20N06T4, NTD24N06LT4G

Keywords - VB3222 MOSFET specs

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