VB3222 Datasheet and Replacement
Type Designator: VB3222
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.14 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 3.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 45 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: TSOP6
VB3222 substitution
VB3222 Datasheet (PDF)
vb3222.pdf

VB3222www.VBsemi.comDual N-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.022 at VGS = 4.5 V TrenchFET Power MOSFET4.820 1.8 nC 100 % Rg Tested0.028 at VGS = 2.5 V 3.3 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch for Portable Applicati
Datasheet: RSS090P03 , CS3N40A23 , CS3N40A3H , CS3N40A4H , CS3N50B3 , ISL9N306AS3S , CS3N50B4 , VB2703K , STP80NF70 , VB4290 , VB5222 , CS3N90A3H1-G , RTR025N05T , RYU002N05T306 , CS3N80ARH , NTD20N06T4 , NTD24N06LT4G .
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