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VB4290 Specs and Replacement

Type Designator: VB4290

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.14 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 3.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 45 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm

Package: TSOP6

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VB4290 datasheet

 ..1. Size:454K  cn vbsemi
 vb4290.pdf pdf_icon

VB4290

VB4290 www.VBsemi.com Dual P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.065 at VGS = - 4.5V - 4.0 TrenchFET Power MOSFET - 20 2.7 nC 0.090 at VGS = - 2.5 V - 3.2 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch for Portable App... See More ⇒

Detailed specifications: CS3N40A23, CS3N40A3H, CS3N40A4H, CS3N50B3, ISL9N306AS3S, CS3N50B4, VB2703K, VB3222, 5N60, VB5222, CS3N90A3H1-G, RTR025N05T, RYU002N05T306, CS3N80ARH, NTD20N06T4, NTD24N06LT4G, NTD25P03LG

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