VB4290 MOSFET. Datasheet pdf. Equivalent
Type Designator: VB4290
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1.14 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 3.6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 5.2 nC
trⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 45 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
Package: TSOP6
VB4290 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VB4290 Datasheet (PDF)
vb4290.pdf
VB4290www.VBsemi.comDual P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.065 at VGS = - 4.5V - 4.0 TrenchFET Power MOSFET- 20 2.7 nC0.090 at VGS = - 2.5 V - 3.2 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch for Portable App
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: BL20N60-F
History: BL20N60-F
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918