SI9435BDY-T1-E3 MOSFET Datasheet: P-Ch, 30V, 4.1A. Full specification with pinout and replacement list

SI9435BDY-T1-E3 Specs and Replacement

Type Designator: SI9435BDY-T1-E3

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm

Package: SO8

SI9435BDY-T1-E3 substitution

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SI9435BDY-T1-E3 datasheet

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SI9435BDY-T1-E3 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET 0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC 0.060 at VGS = - 4.5 V - 4.4 S SO-8 G SD 1 8 S D 2 7 3 6 SD G D 4 5 ... See More ⇒

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SMD Type IC SMD Type MOSFET P-Channel Enhancement MOSFET SI9435BDY (KI9435BDY) SOP-8 Features VDSS = -30V ID = -5.7A (VGS = -10V) RDS(ON) = 42 m @ VGS = -10 V 1.50 0.15 RDS(ON) = 70 m @ VGS = -4.5 V S S D 1 8 G S D 2 7 S D 3 6 G D 4 5 D P-Channel MOSFET Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltag... See More ⇒

Detailed specifications: NCE4688, NCE3400A, NCE3404, NCE40P05Y, CS16N65FA9H, SI9424DY-T1-E3, SI9430DY-T1, SI9433DY, IRFP250N, SI9435DY-T1, CS60N04C4, NDT452AP-NL, CS16N06AE-G, CS12N06AE-G, RQK0301FG, RRQ030P03TR, RRR040P03TL