All MOSFET. SI9435BDY-T1-E3 Datasheet

 

SI9435BDY-T1-E3 Datasheet and Replacement


   Type Designator: SI9435BDY-T1-E3
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
   Package: SO8
 

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SI9435BDY-T1-E3 Datasheet (PDF)

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SI9435BDY-T1-E3

SI9435BDY-T1-E3www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC0.060 at VGS = - 4.5 V - 4.4SSO-8GSD1 8S D2 73 6SDG D4 5

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SI9435BDY-T1-E3

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SI9435BDY-T1-E3

SMD Type ICSMD Type MOSFETP-Channel Enhancement MOSFET SI9435BDY (KI9435BDY)SOP-8 Features VDSS = -30V ID = -5.7A (VGS = -10V) RDS(ON) = 42 m @ VGS = -10 V1.50 0.15 RDS(ON) = 70 m @ VGS = -4.5 VSS D1 8GS D2 7S D3 6G D4 5DP-Channel MOSFET Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain-Source Voltag

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Datasheet: NCE4688 , NCE3400A , NCE3404 , NCE40P05Y , CS16N65FA9H , SI9424DY-T1-E3 , SI9430DY-T1 , SI9433DY , STP75NF75 , SI9435DY-T1 , CS60N04C4 , NDT452AP-NL , CS16N06AE-G , CS12N06AE-G , RQK0301FG , RRQ030P03TR , RRR040P03TL .

Keywords - SI9435BDY-T1-E3 MOSFET datasheet

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