SI9945AEY-T1-E3 PDF Specs and Replacement
Type Designator: SI9945AEY-T1-E3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3.3 nS
Cossⓘ - Output Capacitance: 110 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: SO8
SI9945AEY-T1-E3 substitution
SI9945AEY-T1-E3 PDF Specs
si9945aey-t1-e3.pdf
SI9945AEY-T1-E3 www.VBsemi.tw Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 100 % Rg and UIS tested RDS(on) ( ) at VGS = 10 V 0.040 RDS(on) ( ) at VGS = 4.5 V 0.055 ID (A) per leg 7 Configuration Dual SO-8 Dual D2 D1 D2 D2 5 D1 6 D1 7 8 G1 G2 4 G2 3 3 S1 S2 S2 S2 2 2 G G1 1 1 N-Channel MOSFET N-... See More ⇒
Detailed specifications: SI4922BDY , CS6N70A8D , CS6N70B3D1-G , CS6N70CRHD , SI4946BEY-T1 , CS6N70FA9H , SMC3407S , CS6N80A0H , BS170 , SI9945BDY-T1 , SI9945DY , CS6N90A8H , NCE2305A , NCE3007S , MTD6P10ET4 , MMSF7P03HDR2G , CS730A8H .
Keywords - SI9945AEY-T1-E3 MOSFET specs
SI9945AEY-T1-E3 cross reference
SI9945AEY-T1-E3 equivalent finder
SI9945AEY-T1-E3 pdf lookup
SI9945AEY-T1-E3 substitution
SI9945AEY-T1-E3 replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
