SI9945AEY-T1-E3 Datasheet and Replacement
Type Designator: SI9945AEY-T1-E3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 3.3 nS
Cossⓘ - Output Capacitance: 110 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: SO8
SI9945AEY-T1-E3 substitution
SI9945AEY-T1-E3 Datasheet (PDF)
si9945aey-t1-e3.pdf
SI9945AEY-T1-E3www.VBsemi.twDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-
Datasheet: SI4922BDY , CS6N70A8D , CS6N70B3D1-G , CS6N70CRHD , SI4946BEY-T1 , CS6N70FA9H , SMC3407S , CS6N80A0H , 18N50 , SI9945BDY-T1 , SI9945DY , CS6N90A8H , NCE2305A , NCE3007S , MTD6P10ET4 , MMSF7P03HDR2G , CS730A8H .
History: ME20P03-G | SWD30N06 | IRL620PBF | SST70R600S2 | WMP80R1K0S | SI7113ADN | FDD9410F085
Keywords - SI9945AEY-T1-E3 MOSFET datasheet
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History: ME20P03-G | SWD30N06 | IRL620PBF | SST70R600S2 | WMP80R1K0S | SI7113ADN | FDD9410F085
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