CS6N80_A8 MOSFET. Datasheet pdf. Equivalent
Type Designator: CS6N80_A8
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 110 W
Maximum Drain-Source Voltage |Vds|: 800 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 6 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 18 nS
Drain-Source Capacitance (Cd): 100 pF
Maximum Drain-Source On-State Resistance (Rds): 2.2 Ohm
Package: TO220AB
CS6N80_A8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CS6N80_A8 Datasheet (PDF)
1.1. cs6n80 a8.pdf 
Size:848K _crhj
Silicon N-Channel Power MOSFET R ○ CS6N80 A8 General Description： VDSS 800 V CS6N80 A8, the silicon N-channel Enhanced VDMOSFETs, is ID 6 A PD(TC=25℃) 110 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 1.8 Ω conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi
2.1. cs6n80 a0h.pdf Size:736K _crhj
Silicon N-Channel Power MOSFET R ○ CS6N80 A0H General Description： VDSS 800 V CS6N80 A0H, the silicon N-channel Enhanced ID 6 A PD(TC=25℃) 110 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe
2.2. cs6n80 arh.pdf Size:675K _crhj
Silicon N-Channel Power MOSFET R ○ CS6N80 ARH General Description： VDSS 800 V CS6N80 ARH, the silicon N-channel Enhanced ID 6 A PD(TC=25℃) 110 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
