IRF640FI MOSFET PDF: N-Ch, 200V, 10A. Datasheet. Full specification with pinout and replacement list

IRF640FI Specs and Replacement

   Type Designator: IRF640FI
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 270 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: ISOWATT220

IRF640FI substitution

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IRF640FI datasheet

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7.1. Size:332K st
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IRF640 IRF640FP N-channel 200V - 0.15 - 18A TO-220/TO-220FP Mesh overlay Power MOSFET General features Type VDSS RDS(on) ID IRF640 200V ... See More ⇒

7.2. Size:107K st
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IRF640 IRF640FP N - CHANNEL 200V - 0.150 - 18A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE VDSS RDS(on) ID IRF640 200 V ... See More ⇒

7.3. Size:330K st
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IRF640 IRF640FP N-channel 200V - 0.15 - 18A TO-220/TO-220FP Mesh overlay Power MOSFET General features Type VDSS RDS(on) ID IRF640 200V ... See More ⇒

Detailed specifications: IRF633 , IRF634 , IRF634A , IRF634S , IRF635 , IRF636A , IRF640 , IRF640A , AO3407 , IRF640L , IRF640S , IRF641 , IRF642 , IRF643 , IRF644 , IRF644A , IRF644S .