IRF640FI Datasheet and Replacement
Type Designator: IRF640FI
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 75 nS
Cossⓘ - Output Capacitance: 270 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: ISOWATT220
IRF640FI substitution
IRF640FI Datasheet (PDF)
irf640 irf640fp.pdf
IRF640IRF640FPN-channel 200V - 0.15 - 18A TO-220/TO-220FPMesh overlay Power MOSFETGeneral featuresType VDSS RDS(on) IDIRF640 200V
irf640f fp.pdf
IRF640IRF640FP N - CHANNEL 200V - 0.150 - 18A TO-220/TO-220FPMESH OVERLAY MOSFETTYPE VDSS RDS(on) IDIRF640 200 V
irf640fp.pdf
IRF640IRF640FPN-channel 200V - 0.15 - 18A TO-220/TO-220FPMesh overlay Power MOSFETGeneral featuresType VDSS RDS(on) IDIRF640 200V
Datasheet: IRF633 , IRF634 , IRF634A , IRF634S , IRF635 , IRF636A , IRF640 , IRF640A , 4N60 , IRF640L , IRF640S , IRF641 , IRF642 , IRF643 , IRF644 , IRF644A , IRF644S .
Keywords - IRF640FI MOSFET datasheet
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