All MOSFET. IRF640FI Datasheet

 

IRF640FI MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRF640FI
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 57 nC
   trⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 270 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: ISOWATT220

 IRF640FI Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF640FI Datasheet (PDF)

 ..1. Size:317K  1
 irf640 irf640fi.pdf

IRF640FI IRF640FI

 7.1. Size:332K  st
 irf640 irf640fp.pdf

IRF640FI IRF640FI

IRF640IRF640FPN-channel 200V - 0.15 - 18A TO-220/TO-220FPMesh overlay Power MOSFETGeneral featuresType VDSS RDS(on) IDIRF640 200V

 7.2. Size:107K  st
 irf640f fp.pdf

IRF640FI IRF640FI

IRF640IRF640FP N - CHANNEL 200V - 0.150 - 18A TO-220/TO-220FPMESH OVERLAY MOSFETTYPE VDSS RDS(on) IDIRF640 200 V

 7.3. Size:330K  st
 irf640fp.pdf

IRF640FI IRF640FI

IRF640IRF640FPN-channel 200V - 0.15 - 18A TO-220/TO-220FPMesh overlay Power MOSFETGeneral featuresType VDSS RDS(on) IDIRF640 200V

Datasheet: IRF633 , IRF634 , IRF634A , IRF634S , IRF635 , IRF636A , IRF640 , IRF640A , AO3400 , IRF640L , IRF640S , IRF641 , IRF642 , IRF643 , IRF644 , IRF644A , IRF644S .

 

 
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