NTF5P03T3G Datasheet and Replacement
Type Designator: NTF5P03T3G
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 35 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 4.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 120 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: SOT223
- MOSFET Cross-Reference Search
NTF5P03T3G Datasheet (PDF)
ntf5p03t3g.pdf

NTF5P03T3GPower MOSFET5.2 A, 30 VP-Channel SOT-223http://onsemi.comFeatures Ultra Low RDS(on)5.2 AMPERES, 30 VOLTS Higher Efficiency Extending Battery LifeRDS(on) = 100 mW Logic Level Gate Drive Miniature SOT-223 Surface Mount Package Avalanche Energy Specified S This is a Pb-Free DeviceGApplications DC-DC Converters Power Management
ntf5p03t3g.pdf

NTF5P03T3Gwww.VBsemi.twP-Channel 35 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A)d Qg (Typ.)Definition0.050 at VGS = - 10 V - 6.2 TrenchFET Power MOSFET- 35 9.8 nC0.060 at VGS = - 4.5 V - 5.1 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECS APPLICATIONS Loa
ntf5p03 nvf5p03.pdf

NTF5P03, NVF5P03Power MOSFET-5.2 A, -30 VP-Channel SOT-223http://onsemi.comFeatures Ultra Low RDS(on)-5.2 AMPERES, -30 VOLTS Higher Efficiency Extending Battery LifeRDS(on) = 100 mW Logic Level Gate Drive Miniature SOT-223 Surface Mount Package Avalanche Energy Specified S AEC-Q101 Qualified and PPAP Capable - NVF5P03T3G These Devices are Pb-Free
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: SSF4604 | AON6794 | BUZ84 | CED05N8 | STF30NM50N | IRLR024 | BL10N70-A
Keywords - NTF5P03T3G MOSFET datasheet
NTF5P03T3G cross reference
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NTF5P03T3G replacement
History: SSF4604 | AON6794 | BUZ84 | CED05N8 | STF30NM50N | IRLR024 | BL10N70-A



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