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CS7N65A3R Spec and Replacement


   Type Designator: CS7N65A3R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 93 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO251

 CS7N65A3R Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CS7N65A3R Specs

 ..1. Size:279K  wuxi china
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CS7N65A3R

Silicon N-Channel Power MOSFET R CS7N65 A3R General Description VDSS 650 V CS7N65 A3R, the silicon N-channel Enhanced ID 7 A PD(TC=25 ) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power ... See More ⇒

 6.1. Size:644K  wuxi china
 cs7n65a3tdy.pdf pdf_icon

CS7N65A3R

Silicon N-Channel Power MOSFET R CS7N65 A3TDY General Description VDSS 650 V CS7N65 A3TDY, the silicon N-channel Enhanced ID 7 A PD(TC=25 ) 95 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow... See More ⇒

 7.1. Size:759K  wuxi china
 cs7n65a4tdy.pdf pdf_icon

CS7N65A3R

Silicon N-Channel Power MOSFET R CS7N65 A4TDY General Description VDSS 650 V CS7N65 A4TDY, the silicon N-channel Enhanced ID 7 A PD(TC=25 ) 95 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p... See More ⇒

 7.2. Size:760K  wuxi china
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CS7N65A3R

Silicon N-Channel Power MOSFET R CS7N65 A0D General Description VDSS 650 V CS7N65 A0D, the silicon N-channel Enhanced ID 7 A PD(TC=25 ) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.98 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe... See More ⇒

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Detailed specifications: CS7N60A3R , CS7N60A4R , NCE0108AS , NTF5P03T3G , NTGS3443T1G , NTGS4111PT , CS7N60FA9R , SSM3K335 , 7N60 , SQ2348ES-T1 , CS7N65A4R , STD2NB60T4 , CS7N65FA9R , SI4848DY-T1 , SI4848DY-T1-E3 , SI4850DY-T1 , CS7N80FA9 .

History: SML80J44 | HAF2001

Keywords - CS7N65A3R MOSFET specs

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