CS7N65_A3R MOSFET. Datasheet pdf. Equivalent
Type Designator: CS7N65_A3R
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 100 W
Maximum Drain-Source Voltage |Vds|: 650 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 7 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 21 nS
Drain-Source Capacitance (Cd): 93 pF
Maximum Drain-Source On-State Resistance (Rds): 1.4 Ohm
Package: TO251
CS7N65_A3R Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CS7N65_A3R Datasheet (PDF)
1.1. cs7n65 a3tdy.pdf 
Size:644K _crhj
Silicon N-Channel Power MOSFET R ○ CS7N65 A3TDY General Description： VDSS 650 V CS7N65 A3TDY, the silicon N-channel Enhanced ID 7 A PD(TC=25℃) 95 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.1 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow
1.2. cs7n65 a3r.pdf Size:279K _crhj
Silicon N-Channel Power MOSFET R ○ CS7N65 A3R General Description： VDSS 650 V CS7N65 A3R, the silicon N-channel Enhanced ID 7 A PD(TC=25℃) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.2 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
2.1. cs7n65 a4r.pdf Size:283K _crhj
Silicon N-Channel Power MOSFET R ○ CS7N65 A4R General Description： VDSS 650 V CS7N65 A4R, the silicon N-channel Enhanced ID 7 A PD(TC=25℃) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.2 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
2.2. cs7n65 a4tdy.pdf Size:759K _crhj
Silicon N-Channel Power MOSFET R ○ CS7N65 A4TDY General Description： VDSS 650 V CS7N65 A4TDY, the silicon N-channel Enhanced ID 7 A PD(TC=25℃) 95 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.1 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p
2.3. cs7n65 a0d.pdf Size:760K _crhj
Silicon N-Channel Power MOSFET R ○ CS7N65 A0D General Description： VDSS 650 V CS7N65 A0D, the silicon N-channel Enhanced ID 7 A PD(TC=25℃) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.98 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe
Datasheet: GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , IRF250 , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL , FDMS3604S , GWM100-01X1-SMD , FDMS3602AS , GWM120-0075X1-SL .
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