All MOSFET. CS7N65_A3R Datasheet

 

CS7N65_A3R MOSFET. Datasheet pdf. Equivalent

Type Designator: CS7N65_A3R

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 100 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 7 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 21 nS

Drain-Source Capacitance (Cd): 93 pF

Maximum Drain-Source On-State Resistance (Rds): 1.4 Ohm

Package: TO251

CS7N65_A3R Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CS7N65_A3R Datasheet (PDF)

1.1. cs7n65 a3tdy.pdf Size:644K _crhj

CS7N65_A3R
CS7N65_A3R

Silicon N-Channel Power MOSFET R ○ CS7N65 A3TDY General Description: VDSS 650 V CS7N65 A3TDY, the silicon N-channel Enhanced ID 7 A PD(TC=25℃) 95 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.1 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

1.2. cs7n65 a3r.pdf Size:279K _crhj

CS7N65_A3R
CS7N65_A3R

Silicon N-Channel Power MOSFET R ○ CS7N65 A3R General Description: VDSS 650 V CS7N65 A3R, the silicon N-channel Enhanced ID 7 A PD(TC=25℃) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.2 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 2.1. cs7n65 a4r.pdf Size:283K _crhj

CS7N65_A3R
CS7N65_A3R

Silicon N-Channel Power MOSFET R ○ CS7N65 A4R General Description: VDSS 650 V CS7N65 A4R, the silicon N-channel Enhanced ID 7 A PD(TC=25℃) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.2 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

2.2. cs7n65 a4tdy.pdf Size:759K _crhj

CS7N65_A3R
CS7N65_A3R

Silicon N-Channel Power MOSFET R ○ CS7N65 A4TDY General Description: VDSS 650 V CS7N65 A4TDY, the silicon N-channel Enhanced ID 7 A PD(TC=25℃) 95 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.1 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

 2.3. cs7n65 a0d.pdf Size:760K _crhj

CS7N65_A3R
CS7N65_A3R

Silicon N-Channel Power MOSFET R ○ CS7N65 A0D General Description: VDSS 650 V CS7N65 A0D, the silicon N-channel Enhanced ID 7 A PD(TC=25℃) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.98 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

Datasheet: GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , IRF250 , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL , FDMS3604S , GWM100-01X1-SMD , FDMS3602AS , GWM120-0075X1-SL .

 

 
Back to Top

 


CS7N65_A3R
  CS7N65_A3R
  CS7N65_A3R
 

social 

LIST

Last Update

MOSFET: WFD5N65L | W15NK90Z | VN1206N5 | TK13A60W | SUP70060E | STP140N6F7 | STH140N6F7 | STD140N6F7 | SIHG47N60AEF | R6018JNX | PSMN3R7-100BSE | P75NF75 | NVD4C05NT4G | NTHL040N65S3F | MTD300N20J3 |

 

 

 
Back to Top