All MOSFET. CS7N65_A3R Datasheet

 

CS7N65_A3R MOSFET. Datasheet pdf. Equivalent

Type Designator: CS7N65_A3R

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 100 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 7 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 21 nS

Drain-Source Capacitance (Cd): 93 pF

Maximum Drain-Source On-State Resistance (Rds): 1.4 Ohm

Package: TO251

CS7N65_A3R Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CS7N65_A3R Datasheet (PDF)

0.1. cs7n65 a3r.pdf Size:279K _crhj

CS7N65_A3R
CS7N65_A3R

Silicon N-Channel Power MOSFET R ○ CS7N65 A3R General Description: VDSS 650 V CS7N65 A3R, the silicon N-channel Enhanced ID 7 A PD(TC=25℃) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.2 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

5.1. cs7n65 a3tdy.pdf Size:644K _crhj

CS7N65_A3R
CS7N65_A3R

Silicon N-Channel Power MOSFET R ○ CS7N65 A3TDY General Description: VDSS 650 V CS7N65 A3TDY, the silicon N-channel Enhanced ID 7 A PD(TC=25℃) 95 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.1 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 6.1. cs7n65 a4r.pdf Size:283K _crhj

CS7N65_A3R
CS7N65_A3R

Silicon N-Channel Power MOSFET R ○ CS7N65 A4R General Description: VDSS 650 V CS7N65 A4R, the silicon N-channel Enhanced ID 7 A PD(TC=25℃) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.2 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

6.2. cs7n65 a4tdy.pdf Size:759K _crhj

CS7N65_A3R
CS7N65_A3R

Silicon N-Channel Power MOSFET R ○ CS7N65 A4TDY General Description: VDSS 650 V CS7N65 A4TDY, the silicon N-channel Enhanced ID 7 A PD(TC=25℃) 95 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.1 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p

 6.3. cs7n65 a0d.pdf Size:760K _crhj

CS7N65_A3R
CS7N65_A3R

Silicon N-Channel Power MOSFET R ○ CS7N65 A0D General Description: VDSS 650 V CS7N65 A0D, the silicon N-channel Enhanced ID 7 A PD(TC=25℃) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.98 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

Datasheet: CS7N60_A3R , CS7N60_A4R , CS7N60_A7HD , CS7N60_A8HD , CS7N60F_A9HD , CS7N60F_A9HDY , CS7N60F_A9R , CS7N65_A0D , BUK455-200A , CS7N65_A3TDY , CS7N65_A4R , CS7N65_A4TDY , CS7N65F_A9R , CS7N65F_A9TDY , CS7N70_ARD , CS7N80_A8 , CS7N80F_A9 .

 

 
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