STD2NB60T4 PDF and Equivalents Search

 

STD2NB60T4 Specs and Replacement

Type Designator: STD2NB60T4

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 177 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.1 Ohm

Package: TO252

STD2NB60T4 substitution

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STD2NB60T4 datasheet

 ..1. Size:853K  cn vbsemi
 std2nb60t4.pdf pdf_icon

STD2NB60T4

STD2NB60T4 www.VBsemi.tw Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 650 Available Requirement RDS(on) ( )VGS = 10 V 1.8 RoHS* Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 48 Ruggedness Qgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 19 Compliant to RoHS... See More ⇒

 6.1. Size:102K  st
 std2nb60.pdf pdf_icon

STD2NB60T4

STD2NB60 N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET TYPE V R I DSS DS(on) D STD2NB60 600 V ... See More ⇒

 8.1. Size:274K  st
 std2nb25.pdf pdf_icon

STD2NB60T4

STD2NB25 N - CHANNEL 250V - 1.7 - 2A - IPAK/DPAK PowerMESH MOSFET TYPE VDSS RDS(on) ID STD2NB25 250 V ... See More ⇒

 8.2. Size:451K  st
 std2nb50.pdf pdf_icon

STD2NB60T4

STD2NB50 STD2NB50-1 N-CHANNEL 500V - 5 - 1A DPAK / IPAK PowerMesh MOSFET TYPE VDSS RDS(on) ID STD2NB50 500V ... See More ⇒

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Detailed specifications: NTF5P03T3G, NTGS3443T1G, NTGS4111PT, CS7N60FA9R, SSM3K335, CS7N65A3R, SQ2348ES-T1, CS7N65A4R, IRF830, CS7N65FA9R, SI4848DY-T1, SI4848DY-T1-E3, SI4850DY-T1, CS7N80FA9, ST2315S23R, ST2341S23R, STB60N06-14

Keywords - STD2NB60T4 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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