STD2NB60T4 Datasheet and Replacement
Type Designator: STD2NB60T4
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 177 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.1 Ohm
Package: TO252
STD2NB60T4 substitution
STD2NB60T4 Datasheet (PDF)
std2nb60t4.pdf
STD2NB60T4www.VBsemi.twPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650AvailableRequirementRDS(on) ()VGS = 10 V 1.8RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 48RuggednessQgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 19 Compliant to RoHS
std2nb60.pdf
STD2NB60N - CHANNEL ENHANCEMENT MODEPowerMESH MOSFETTYPE V R IDSS DS(on) DSTD2NB60 600 V
std2nb25.pdf
STD2NB25N - CHANNEL 250V - 1.7 - 2A - IPAK/DPAKPowerMESH MOSFETTYPE VDSS RDS(on) IDSTD2NB25 250 V
std2nb50.pdf
STD2NB50STD2NB50-1N-CHANNEL 500V - 5 - 1A DPAK / IPAKPowerMesh MOSFETTYPE VDSS RDS(on) IDSTD2NB50 500V
Datasheet: NTF5P03T3G , NTGS3443T1G , NTGS4111PT , CS7N60FA9R , SSM3K335 , CS7N65A3R , SQ2348ES-T1 , CS7N65A4R , P0903BDG , CS7N65FA9R , SI4848DY-T1 , SI4848DY-T1-E3 , SI4850DY-T1 , CS7N80FA9 , ST2315S23R , ST2341S23R , STB60N06-14 .
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