CS8N70FA9H2-G MOSFET Datasheet: N-Ch, 700V, 8A. Full specification with pinout and replacement list

CS8N70FA9H2-G Specs and Replacement

Type Designator: CS8N70FA9H2-G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 48 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22.6 nS

Cossⓘ - Output Capacitance: 130 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm

Package: TO220F

CS8N70FA9H2-G substitution

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CS8N70FA9H2-G datasheet

7.1. Size:242K crhj
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Silicon N-Channel Power MOSFET R CS8N70F A9H2-G General Description VDSS 700 V CS8N70F A9H2-G , the silicon N-channel Enhanced ID 8 A PD(TC=25 ) 48 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various... See More ⇒

7.2. Size:681K convert
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nvert Suzhou Convert Semiconductor Co ., Ltd. CS8N70F 700V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS8N70F TO-220F CS8N70F Absolute Maxim... See More ⇒

Detailed specifications: CS8N50FA9R, CS8N60A8D, VB1101M, CS8N60ARD, TP0610K-T1, TPC8103, TPC8104, TK40P04M, IRF1404, CS8N80A8D, CS8N80A8H, VB1330, CS8N80FA9H, CS8N90A8, CS8N90FA9, VB162K, CS90N03B3