All MOSFET. CS8N70FA9H2-G Datasheet

 

CS8N70FA9H2-G Datasheet and Replacement


   Type Designator: CS8N70FA9H2-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 22.6 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
   Package: TO220F
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CS8N70FA9H2-G Datasheet (PDF)

 7.1. Size:242K  crhj
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CS8N70FA9H2-G

Silicon N-Channel Power MOSFET R CS8N70F A9H2-G General Description VDSS 700 V CS8N70F A9H2-G , the silicon N-channel Enhanced ID 8 A PD(TC=25) 48 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 7.2. Size:681K  convert
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CS8N70FA9H2-G

nvertSuzhou Convert Semiconductor Co ., Ltd.CS8N70F700V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS8N70F TO-220F CS8N70FAbsolute Maxim

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: E10P02 | 2N6784 | 2N7107 | IRC6405 | CSD17576Q5B | 2300 | SVG086R0NS

Keywords - CS8N70FA9H2-G MOSFET datasheet

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