All MOSFET. CS8N70FA9H2-G Datasheet

 

CS8N70FA9H2-G Datasheet and Replacement


   Type Designator: CS8N70FA9H2-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 22.6 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
   Package: TO220F
 

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CS8N70FA9H2-G Datasheet (PDF)

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CS8N70FA9H2-G

Silicon N-Channel Power MOSFET R CS8N70F A9H2-G General Description VDSS 700 V CS8N70F A9H2-G , the silicon N-channel Enhanced ID 8 A PD(TC=25) 48 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 7.2. Size:681K  convert
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CS8N70FA9H2-G

nvertSuzhou Convert Semiconductor Co ., Ltd.CS8N70F700V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS8N70F TO-220F CS8N70FAbsolute Maxim

Datasheet: CS8N50FA9R , CS8N60A8D , VB1101M , CS8N60ARD , TP0610K-T1 , TPC8103 , TPC8104 , TK40P04M , IRF1404 , CS8N80A8D , CS8N80A8H , VB1330 , CS8N80FA9H , CS8N90A8 , CS8N90FA9 , VB162K , CS90N03B3 .

History: IRLIZ34GPBF | NCEP6080AG | 2SK750 | TPC8051-H | IPP80N06S2-05 | SSM85T03GJ | MEE4294P-G

Keywords - CS8N70FA9H2-G MOSFET datasheet

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