All MOSFET. KI8205T Datasheet

 

KI8205T Datasheet and Replacement


   Type Designator: KI8205T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 4.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8.2 nS
   Cossⓘ - Output Capacitance: 164 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: SOT163
 

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KI8205T Datasheet (PDF)

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KI8205T

SMD Type MOSFETSMD TypeDual N-Channel High Density Trench MOSFETKI8205T( )SOT-23-6 Unit: mm+0.10.4 -0.1FeaturesSuper high dense cell trench design for low RDS(on).Rugged and reliable.Surface Mount package.1+0.020.15 -0.02+0.01-0.012+0.2-0.1D1 D2S1 1 6 G1D1/D2 2 5 D1/D2G1 G2S2 3 4 G2S1 S2Absolute Maximum Ratings Ta = 25Parameter Symbol Rating

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KI8205T

SMD Type MOSFETSMDTypeDual N-Channel Enhancement MOSFETKI8205ATSSOP-8Unit: mmFeatures6.45+0.1-0.16.5 A, 20 V. rDS(on) = 0.025 @ VGS = 4.5 V 4.45+0.1-0.1rDS(on) = 0.029 @ VGS = 2.5 V.Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain-Source Voltage VDS 20 VGate-Source Voltage VGS 10 VContinuous Drain Current ID 6.5 APulsed Drain Current IDM 20 A

Datasheet: SI4953DY , AO4824L , AO4900 , AO4906 , AO4912 , AO4918 , AO6804 , KI8205A , 13N50 , KI8810DY , KI8810T , KI9926A , KX4N03W , SI4946DY , SI9926BDY , SI9926DY , 2SJ130S .

History: AO4918 | SI1922EDH | SI1917EDH | FTK7N60DD

Keywords - KI8205T MOSFET datasheet

 KI8205T cross reference
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