KI8205T Datasheet and Replacement
Type Designator: KI8205T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 4.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 8.2 nS
Cossⓘ - Output Capacitance: 164 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: SOT163
KI8205T substitution
KI8205T Datasheet (PDF)
ki8205t.pdf

SMD Type MOSFETSMD TypeDual N-Channel High Density Trench MOSFETKI8205T( )SOT-23-6 Unit: mm+0.10.4 -0.1FeaturesSuper high dense cell trench design for low RDS(on).Rugged and reliable.Surface Mount package.1+0.020.15 -0.02+0.01-0.012+0.2-0.1D1 D2S1 1 6 G1D1/D2 2 5 D1/D2G1 G2S2 3 4 G2S1 S2Absolute Maximum Ratings Ta = 25Parameter Symbol Rating
ki8205a.pdf

SMD Type MOSFETSMDTypeDual N-Channel Enhancement MOSFETKI8205ATSSOP-8Unit: mmFeatures6.45+0.1-0.16.5 A, 20 V. rDS(on) = 0.025 @ VGS = 4.5 V 4.45+0.1-0.1rDS(on) = 0.029 @ VGS = 2.5 V.Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain-Source Voltage VDS 20 VGate-Source Voltage VGS 10 VContinuous Drain Current ID 6.5 APulsed Drain Current IDM 20 A
Datasheet: SI4953DY , AO4824L , AO4900 , AO4906 , AO4912 , AO4918 , AO6804 , KI8205A , TK10A60D , KI8810DY , KI8810T , KI9926A , KX4N03W , SI4946DY , SI9926BDY , SI9926DY , 2SJ130S .
Keywords - KI8205T MOSFET datasheet
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