BSL211DV Datasheet and Replacement
Type Designator: BSL211DV
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 4.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 13.9 nS
Cossⓘ - Output Capacitance: 241 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.067 Ohm
Package: SOT163
BSL211DV substitution
BSL211DV Datasheet (PDF)
bsl211dv.pdf

SMD Type MOSFETTransistorsP-Channel Enhancement Mode MOSFETBSL211DV(KSL211DV) Features( )SOT-23-6 Unit: mm+0.1 Super Logic Level (2.5 V rated) 0.4-0.1 150C operating temperature6 5 4 Avalanche rated dv/dt rated 2 31+0.02DD 0.15 -0.02+0.01-0.01+0.2-0.1GGSS1 Drain 4 Source2 Drain 5 Drain3 Gate 6 Drain Absolute Maximum Ratings Ta = 25 ,u
bsl211sp.pdf

Rev 2.0BSL211SPOptiMOS-P Small-Signal-TransistorProduct SummaryFeatureVDS -20 V P-ChannelRDS(on) 67 m Enhancement modeID -4.7 A Super Logic Level (2.5 V rated)P-TSOP6-6 150C operating temperature Avalanche rated dv/dt rated4352 Pb-free lead plating; RoHS compliant61QualifiedaccordingtoAECQ101
Datasheet: 2SJ607-ZJ , A9451 , AO3401A , AO3415AS , AO3415W , AO4335 , AO4705 , AOD413 , IRFB31N20D , DMP1260 , FQD12P10 , FR9024N , KI001P , KI001PW , KI005P , KI005PDFN , KI007P .
History: IPD800N06NG
Keywords - BSL211DV MOSFET datasheet
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History: IPD800N06NG



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