All MOSFET. BSL211DV Datasheet

 

BSL211DV Datasheet and Replacement


   Type Designator: BSL211DV
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 4.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13.9 nS
   Cossⓘ - Output Capacitance: 241 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.067 Ohm
   Package: SOT163
 

 BSL211DV substitution

   - MOSFET ⓘ Cross-Reference Search

 

BSL211DV Datasheet (PDF)

 ..1. Size:141K  kexin
bsl211dv.pdf pdf_icon

BSL211DV

SMD Type MOSFETTransistorsP-Channel Enhancement Mode MOSFETBSL211DV(KSL211DV) Features( )SOT-23-6 Unit: mm+0.1 Super Logic Level (2.5 V rated) 0.4-0.1 150C operating temperature6 5 4 Avalanche rated dv/dt rated 2 31+0.02DD 0.15 -0.02+0.01-0.01+0.2-0.1GGSS1 Drain 4 Source2 Drain 5 Drain3 Gate 6 Drain Absolute Maximum Ratings Ta = 25 ,u

 8.1. Size:348K  infineon
bsl211sp.pdf pdf_icon

BSL211DV

Rev 2.0BSL211SPOptiMOS-P Small-Signal-TransistorProduct SummaryFeatureVDS -20 V P-ChannelRDS(on) 67 m Enhancement modeID -4.7 A Super Logic Level (2.5 V rated)P-TSOP6-6 150C operating temperature Avalanche rated dv/dt rated4352 Pb-free lead plating; RoHS compliant61QualifiedaccordingtoAECQ101

 9.1. Size:413K  infineon
bsl214n.pdf pdf_icon

BSL211DV

BSL214NOptiMOS ':.99 '64;.9 (>.;?6?@%>EFeatures 20 VDST H5@ ) 7

 9.2. Size:419K  infineon
bsl215p.pdf pdf_icon

BSL211DV

BSL215P#

Datasheet: 2SJ607-ZJ , A9451 , AO3401A , AO3415AS , AO3415W , AO4335 , AO4705 , AOD413 , IRFB31N20D , DMP1260 , FQD12P10 , FR9024N , KI001P , KI001PW , KI005P , KI005PDFN , KI007P .

History: IPD800N06NG

Keywords - BSL211DV MOSFET datasheet

 BSL211DV cross reference
 BSL211DV equivalent finder
 BSL211DV lookup
 BSL211DV substitution
 BSL211DV replacement

 

 
Back to Top

 


 
.